Band-gap modified Ge CMOS integrated device and manufacturing method thereof
An integrated device and modified technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, transistors, etc., can solve problems such as unfavorable alloy growth, and achieve the effect of simple preparation technology
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Embodiment 1
[0073] See figure 2 , figure 2 A flow chart of a method for preparing a direct bandgap Ge CMOS integrated device provided by an embodiment of the present invention; the method includes the following steps:
[0074] Step (a), selecting Si substrate;
[0075] Step (b), at a first temperature, growing a Ge thin film layer on the Si substrate;
[0076] Step (c), at a second temperature, growing a Ge layer on the Ge thin film layer;
[0077] Step (d), growing a GeSn layer on the Ge layer;
[0078] Step (e), making STI in the GeSn layer and the Ge layer;
[0079] Step (f), depositing a gate dielectric layer and a gate layer on the surface of the GeSn layer;
[0080] Step (g), etching the gate dielectric layer and the gate layer to form a PMOS device gate region and an NMOS device gate region of the CMOS integrated device;
[0081] Step (h), ion implantation on the surface of the GeSn layer to form the source and drain regions of the PMOS device and the source and drain regio...
Embodiment 2
[0110] See Figure 4a-Figure 4u , Figure 4a-Figure 4u A schematic diagram of a method for fabricating a direct bandgap Ge CMOS integrated device provided by an embodiment of the present invention. On the basis of the above embodiments, this embodiment will introduce the process flow of the present invention in more detail. The method includes:
[0111] S101. Substrate selection. Such as Figure 4a As shown, the Si substrate sheet 201 whose crystal orientation is (001) is selected as the original material;
[0112] S102. Using the method of molecular beam epitaxy (MBE), on the Si substrate 201, grow an n-type Ge film with a crystal orientation of (001) on the Si substrate 201 by a two-step method of low temperature and high temperature, and the doping concentration is 1×10 16 ~5×10 16 cm -3 . specifically:
[0113] S1021, such as Figure 4b As shown, a 50 nm thick "low temperature" Ge ((LT-Ge) film 202 was grown at 275 ~ 325 °C. Most of the relaxation of elastic stres...
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