A method for directly epitaxially growing germanium dummy substrate on silicon substrate
An epitaxial growth, silicon substrate technology, applied in electrical components, circuits, semiconductor/solid-state device manufacturing, etc., can solve the problems of unfavorable III-V heterostructure growth, large surface roughness of epitaxial layers, and dislocation density of epitaxial layers. Advanced problems, to achieve the effect of high single crystal quality, low cost and simple preparation process
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment Construction
[0031] The present invention will be described in further detail below in conjunction with the accompanying drawings and specific embodiments.
[0032] The invention provides a method for directly epitaxially growing a dummy germanium substrate on a silicon substrate through molecular beam epitaxy. figure 1 It is a structural schematic diagram of the germanium dummy substrate of the present embodiment, and the specific preparation method is as follows:
[0033] Through solid-state source molecular beam epitaxy, the (100) and (111) crystal plane silicon substrates are first surface treated. The silicon substrate treated with hydrofluoric acid is introduced into the vacuum chamber, and the substrate is kept rotating. For the silicon (100) substrate, the substrate heater is raised to 500-600° C. and kept for 5-10 minutes; for the silicon ( 111) Substrate, raising the substrate heater to 800-1000° C. and maintaining it for 5-10 minutes.
[0034] Then a silicon buffer layer with ...
PUM
Property | Measurement | Unit |
---|---|---|
thickness | aaaaa | aaaaa |
surface roughness | aaaaa | aaaaa |
surface roughness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com