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Preparation method of monocrystal diamond film

A diamond and thin film technology, applied in the field of preparation of single crystal diamond thin films, can solve the problem of low quality of single crystals of diamond thin films, and achieve the effect of improving the quality of single crystals

Inactive Publication Date: 2020-11-20
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] This application is to solve the technical problem that the quality of diamond thin film single crystal is not high in the prior art

Method used

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  • Preparation method of monocrystal diamond film

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Embodiment Construction

[0038] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Apparently, the described embodiments are only some of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of this application.

[0039] Reference herein to "one embodiment" or "an embodiment" refers to a specific feature, structure or characteristic that may be included in at least one implementation of the present application. In the description of the embodiments of the present application, it should be understood that the orientations or positional relationships indicated by the terms "upper", "lower", "top", and "bottom" are based on the orientations or positional relationships shown in the drawing...

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Abstract

The invention provides a preparation method of a monocrystal diamond film. The preparation method comprises the following steps: obtaining a diamond substrate and a heterogeneous substrate, carrying out He ion implantation on the surface of the diamond substrate, so that implanted ions are gathered at the corresponding depth of the diamond substrate to form a defect layer, and the diamond film onthe defect layer in the diamond substrate is used as a substrate for homoepitaxy, growing a layer of single crystal diamond film on the diamond film by adopting homoepitaxy, bonding the single crystaldiamond film with the heterogeneous substrate to form a bonding structure, performing wet etching or electrochemical etching on the bonding structure, removing the defect layer, and transferring thediamond film to the surface of the heterogeneous substrate, and if the bonding structure is subjected to electrochemical corrosion, carrying out high-temperature annealing on the diamond substrate subjected to homoepitaxy before the step of bonding the diamond film subjected to epitaxy with the heterogeneous substrate, so that the defect layer is graphitized to form a graphitized defect layer, wherein the implantation energy and implantation dose of the He ions are set in a gradient manner according to a defect layer dissolution method.

Description

technical field [0001] The present application relates to the technical field of heterogeneous integration of on-chip functional materials, in particular to a method for preparing a single crystal diamond thin film. Background technique [0002] Single crystal diamond is an important material for realizing advanced integrated photonics components. Traditional on-chip integrated photonics is built on the SOI platform. Since the Si material is only 1.1eV, the wavelength of silicon photonic devices is usually in the near-infrared band, which limits the application expansion of integrated photonics. The forbidden band width of diamond crystal is 5.47eV, and the optical transmission window is from visible light to infrared band; the Mohs hardness of diamond is 10, and the special crystal structure and bond energy also make its chemical properties quite stable, which is a kind of Ideal material; the thermal conductivity of single crystal diamond is >2000W / mK, which is suitable...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/20C30B25/18C30B29/02C30B33/06C30B33/10C30B33/02C25F3/12C30B29/64
CPCC25F3/12C30B25/186C30B25/20C30B29/02C30B29/64C30B33/02C30B33/06C30B33/10
Inventor 欧欣周李平伊艾伦游天桂
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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