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Band-gag-modified Ge material and preparation method thereof

A technology of modification and substrate material, applied in the direction of polycrystalline material growth, chemical instruments and methods, from chemically reactive gases, etc., can solve problems such as unfavorable alloy growth, improve current drive and frequency characteristics, and reduce manufacturing costs. , The effect of preparation technology is simple

Inactive Publication Date: 2016-10-12
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Again, the lattice mismatch between Ge and a-Sn is as high as 14.7%, which is also not conducive to Ge 1-x sn x alloy growth

Method used

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  • Band-gag-modified Ge material and preparation method thereof
  • Band-gag-modified Ge material and preparation method thereof
  • Band-gag-modified Ge material and preparation method thereof

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Embodiment 1

[0051] See figure 1 , figure 1 A flow chart of a method for preparing a direct bandgap Ge material provided in an embodiment of the present invention; the method includes the following steps:

[0052] Step a, select Si substrate;

[0053] Step b, growing a Ge thin film layer on the Si substrate at a first temperature;

[0054] Step c, growing a Ge layer on the Ge thin film layer at a second temperature;

[0055] Step d, growing a GeSn layer on the Ge layer to form a Ge material to be modified;

[0056] Step e, using a stress applying device to apply mechanical stress to the Ge material to be modified to finally form the bandgap modified Ge material.

[0057] Wherein, in step b and step c, the first temperature is lower than the second temperature. That is, relatively speaking, the first temperature is low temperature, and the second temperature is high temperature. For example, the first temperature is 275°C-325°C; the second temperature is 500°C-600°C.

[0058] Optiona...

Embodiment 2

[0074] See Figure 4a-Figure 4d , Figure 4a-Figure 4d It is a schematic diagram of a method for preparing a direct bandgap Ge material provided by an embodiment of the present invention. On the basis of the above embodiments, this embodiment will introduce the process flow of the present invention in more detail. The method includes:

[0075] S101. Substrate selection. Such as Figure 4a As shown, the Si substrate sheet 201 whose crystal orientation is (001) is selected as the original material;

[0076] S102. Growth of epitaxial layer: using molecular beam epitaxy (MBE), grow an n-type Ge thin film with a crystal orientation of (001) on a Si substrate by a two-step method of low temperature and high temperature, with a doping concentration of 1×10 16 ~5×10 16 cm -3 . specifically:

[0077] S1021, such as Figure 4b As shown, a 50nm-thick "low temperature" Ge (LT-Ge) thin film 202 is grown at 275-325°C. Most of the relaxation of elastic stress occurs in the low-temp...

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Abstract

The invention relates to a band gap modified Ge material and a preparation method thereof. The preparation method comprises: selecting a Si substrate; growing a Ge thin film layer on the Si substrate at a first temperature; growing a Ge layer on the Ge thin film layer at a second temperature; growing a Ge layer on the Ge layer growing a GeSn layer on it to form a Ge material to be modified; using a stress applying device to apply mechanical stress to the Ge material to be modified to finally form the band gap modified Ge material. The present invention realizes the transformation of the Ge bandgap type by means of co-action of alloying and stress, and overcomes the difficult process caused by the transformation of the Ge bandgap type by relying solely on alloying and stress alone due to low solid solubility and high stress intensity. question. The bandgap modified Ge material can be applied to both electronic devices and photonic devices, and can provide another technical approach for monolithic optoelectronic integration.

Description

technical field [0001] The invention relates to the technical field of integrated circuits, in particular to a bandgap modified Ge material and a preparation method thereof. Background technique [0002] An optoelectronic integrated circuit is an integrated circuit that integrates photonic devices and electronic devices on the same substrate to form an integrated circuit with both optical and electrical signal processing functions. According to the structure, optoelectronic integrated circuits can be divided into two types: hybrid optoelectronic integrated circuits and monolithic optoelectronic integrated circuits. Among them, monolithic optoelectronic integrated circuit is an important direction of current research and development. [0003] At present, monolithic optoelectronic integrated circuits mainly refer to the integration of active optical devices, passive optical devices and electronic devices on the same substrate, but there is no technology to realize the integra...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B23/02C30B25/02C30B29/08C30B29/52C30B31/22C30B33/02H01L21/02
CPCH01L21/02532C30B23/02C30B25/02C30B29/08C30B29/52C30B31/22C30B33/02H01L21/02617
Inventor 任远宋建军蒋道福宣荣喜胡辉勇张鹤鸣
Owner XIDIAN UNIV
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