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Gas barrier film

A technology of gas barrier property and gas barrier layer, applied in the field of gas barrier film, which can solve the problems of gas barrier layer defects and inability to stably obtain high gas barrier properties

Active Publication Date: 2016-09-07
TORAY IND INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] However, in the method of forming a gas barrier layer mainly composed of silicon oxide by the plasma CVD method as in Patent Document 1, there is a problem in that the surface of the polymer base material serving as the base of the gas barrier layer is affected. Due to the influence of unevenness, defects are generated inside the formed gas barrier layer, and high gas barrier properties cannot be stably obtained

Method used

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Examples

Experimental program
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Embodiment 1

[0133] (formation of layer 1)

[0134] As the polymer substrate 1, a polyethylene terephthalate film ("Lumila" (registered trademark) U48 manufactured by Toray Co., Ltd.) with a thickness of 50 μm was used.

[0135] use Figure 5 The shown winding type sputtering-chemical vapor deposition device 4 (hereinafter simply referred to as sputtering-CVD device) is provided with a sputtering target as a mixed sintered material formed of zinc oxide, silicon dioxide and aluminum oxide. The sputter electrode 11 is sputtered with argon and oxygen, and ZnO-SiO is provided as the first layer on the surface of the polymer substrate 1. 2 -Al 2 o 3 layer so that the film thickness becomes 150 nm.

[0136] The specific operation is as follows. First, a sintered sputtering target having a composition mass ratio of zinc oxide / silicon dioxide / alumina of 77 / 20 / 3 was set on the sputtering electrode 11 of the sputtering-CVD apparatus 4 . On the unwinding roll 6 in the winding chamber 5 of the s...

Embodiment 2

[0145] (Synthesis of Polyurethane Compounds with Aromatic Ring Structure)

[0146]Into a 5-liter 4-neck flask, 300 parts by mass of bisphenol A diglycidyl ether acrylic acid adduct (manufactured by Kyoeisha Chemical Co., Ltd., trade name: Epoxy Ester 3000A) and 710 parts by mass of ethyl acetate were added, and It heated so that internal temperature might become 60 degreeC. 0.2 parts by mass of di-n-butyltin dilaurate was added as a synthesis catalyst, and 200 parts by mass of dicyclohexylmethane 4,4'-diisocyanate (manufactured by Tokyo Chemical Industry Co., Ltd.) was added dropwise over 1 hour while stirring. After completion of the dropwise addition, the reaction was continued for 2 hours, and then 25 parts by mass of diethylene glycol (manufactured by Wako Pure Chemical Industries, Ltd.) was added dropwise over 1 hour. After the dropwise addition, the reaction was continued for 5 hours to obtain a polyurethane compound having an aromatic ring structure with a weight avera...

Embodiment 3

[0157] Set ZnO-SiO as layer 1 2 -Al 2 o 3 A gas barrier film was obtained in the same manner as in Example 2 except that the thickness of the layer was 450 nm.

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Abstract

The purpose of the invention is to provide a gas barrier film having excellent gas barrier characteristics. This gas barrier film includes, on at least one surface of a polymer base material, a gas barrier layer in which a first layer including zinc oxide and silicon dioxide and a second layer including a silicon compound are arranged in contact with one another in this order from the polymer base material, wherein the binding energy of the Si 2p orbit at the interface between the first layer and the second layer as measured by X-ray photoelectron spectroscopy is greater than the binding energy of the Si 2p orbit in the first layer and is smaller than the binding energy of the Si 2p orbit in the second layer.

Description

technical field [0001] The present invention relates to a gas barrier film used as a material for electronic components such as packaging materials for foods and pharmaceuticals requiring high gas barrier properties, solar cells, electronic paper, and organic electroluminescence (EL) displays. Background technique [0002] As a technique for improving the gas barrier properties of a polymer substrate, for example, it is disclosed that a gas containing silicon oxide as a main component is formed on a polymer substrate by a plasma CVD method using a vapor containing an organosilicon compound and an oxygen gas gas. , a layer containing at least one compound of carbon, hydrogen, silicon, and oxygen to improve gas barrier properties while maintaining transparency (Patent Document 1 (see claims)). In addition, as another technique for improving gas barrier properties, it is disclosed that an organic layer containing an epoxy compound and a silicon-based oxide layer formed by plasm...

Claims

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Application Information

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IPC IPC(8): B32B9/00B65D65/40C08J7/043C08J7/046C08J7/048
CPCC23C28/00C08J2367/02C08J2375/04C23C14/08C23C16/401C23C28/04C08J7/0423C08J7/048C08J7/043C08J7/046B32B9/04B32B9/045B32B2307/7244B32B2307/7242B32B2264/102B32B2264/10B32B2439/00B32B2457/00
Inventor 上林浩行佐竹光德永幸大
Owner TORAY IND INC
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