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Method for improving breakdown-resistant ability of ferroelectric film

A ferroelectric thin film and anti-breakdown technology, which is applied in the manufacture/assembly of piezoelectric/electrostrictive devices, etc., can solve the problems of increased leakage current of ferroelectric thin film, not very tight interface between thin film and electrode, etc., to achieve The effect of increasing the contact area, improving the resistance to breakdown, and improving performance

Inactive Publication Date: 2016-09-07
UNIV OF JINAN
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example the widely used Pt (111) / Ti / SiO 2 / Si, the interface between the film and the electrode is not very tightly combined during the preparation of the film, which leads to an increase in the leakage current of the ferroelectric film prepared on it
At present, there is no research report on improving the performance of the film by changing the material of the bottom electrode, especially there is no research on improving the breakdown voltage of the film by using aluminum as the bottom electrode

Method used

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  • Method for improving breakdown-resistant ability of ferroelectric film
  • Method for improving breakdown-resistant ability of ferroelectric film
  • Method for improving breakdown-resistant ability of ferroelectric film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] Preparation of pure BiFeO on an aluminum sheet with a length and width of 2×2 cm and a thickness of 0.3 mm 3 thin film, BiFeO 3 The film preparation process is as follows:

[0043] 1. Pretreatment of aluminum sheets: tear off the surface protective film of 2×2cm aluminum sheets with a thickness of 0.3mm, then burn them in a nitrogen atmosphere at 300°C for 10 minutes in a rapid annealing furnace, and then cool them to room temperature under nitrogen conditions.

[0044] 2. BiFeO 3 Film preparation:

[0045] 2.1 Weigh bismuth nitrate and iron nitrate with a molar ratio of 1.1:1, respectively, and use 40 ml of ethylene glycol and acetic acid as solvents to prepare a precursor solution with a concentration of 0.5 mol / L;

[0046] 2.2 Preparation of BiFeO by spin coating-layer annealing method 3 film. The precursor solution was deposited on the pretreated aluminum sheet by the spin coating method, and then the material was placed on a hot plate to dry, and the dried fil...

Embodiment 2

[0049] Preparation of pure BiFeO on Al / Si electrode with Al film thickness of 1 μm 3 thin film, BiFeO 3 The film preparation process is as follows:

[0050] 1. Electrode pretreatment: An aluminum film with a thickness of 1 micron is plated on the Si electrode by evaporation to obtain an Al / Si electrode. An Al / Si electrode with an aluminum film thickness of 1 micron was pre-fired in a rapid annealing furnace at 400° C. for 3 minutes in a nitrogen atmosphere, and then cooled to room temperature in a nitrogen atmosphere.

[0051] 2. BiFeO 3 Film preparation:

[0052] 2.1 Weigh bismuth nitrate and iron nitrate with a molar ratio of 1.1:1 respectively, and use 40 ml ethylene glycol and acetic acid as solvents to prepare a precursor solution with a concentration of 1 mol / L;

[0053] 2.2 Preparation of BiFeO by spin coating-layer annealing method 3 film. The precursor solution was deposited on the pretreated Al / Si electrode by the spin coating method, and then the material was ...

Embodiment 3

[0056] Preparation of Bi on an aluminum sheet with a length and width of 2×2 cm and a thickness of 0.3 mm 0.95 La 0.05 FeO 3 Film, Bi 0.95 La 0.05 FeO 3 The film preparation process is as follows:

[0057] 1. Pretreatment of aluminum sheets: tear off the surface protective film of 2×2cm aluminum sheets with a thickness of 0.3mm, and then burn in a rapid annealing furnace at 400°C for 3 minutes under a nitrogen atmosphere, and then cool to room temperature under nitrogen.

[0058] 2. Bi 0.95 La 0.05 FeO 3 Film preparation:

[0059] 2.1 Weigh bismuth nitrate, iron nitrate and lanthanum nitrate with a molar ratio of 1.1:1:0.05 respectively, and use 40 ml of ethylene glycol and acetic acid as solvents to prepare a precursor solution with a concentration of 1 mol / L;

[0060] 2.2 The precursor solution was deposited on the pretreated aluminum sheet by the spin coating method, and then the material was placed on a hot plate to dry, and the dried film was placed in a rapid an...

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Abstract

The invention discloses a method for improving a breakdown-resistant ability of a ferroelectric film. The method for improving the breakdown-resistant ability of the ferroelectric film comprises the steps of using a metallic aluminum sheet as an electrode of the ferroelectric film or using an other material having a surface thereof coated with a layer of an aluminum film as the electrode of the ferroelectric film, carrying out preprocessing for the electrode of the ferroelectric film and then growing the ferroelectric film on the pre-processed electrode; and carrying out preprocessing for the electrode of the ferroelectric film under gas protection and at 300-480 DEG C. According to the method for improving the breakdown-resistant ability of the ferroelectric film, an idea of improving the breakdown-resistant ability of the ferroelectric film through selection of the electrode is firstly proposed, and the feasible electrode is provided. The obtained ferroelectric film has very strong breakdown-resistant ability, the leakage current is very low, the true ferroelectric performance of the film can be detected, and the method for improving the breakdown-resistant ability of the ferroelectric film has good prospect in preparation process and device application of the ferroelectric film in future.

Description

technical field [0001] The invention relates to a method for improving the anti-breakdown ability of a ferroelectric thin film, in particular to a method for improving the anti-breakdown ability of the ferroelectric thin film and devices during the preparation and application process by selecting electrodes, and belongs to the technical field of new microelectronic materials. Background technique [0002] BiFeO 3 The material has a simple perovskite structure with two kinds of structural order at room temperature, that is, ferroelectric order (T C ~830℃) and G-type ferromagnetic ordering (T N ~370°C), it is one of the few ferroelectric materials with both ferroelectricity and ferromagnetism at room temperature. Researchers have demonstrated that BiFeO 3 It has good ferroelectric and piezoelectric properties, and is expected to be applied in high-density ferroelectric memory and piezoelectric microelectromechanical devices, but pure BiFeO 3 Thin film leakage current is ve...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L41/22H01L41/39C04B35/26H10N30/01H10N30/093
CPCC04B35/26H10N30/01H10N30/093
Inventor 胡广达闫静蒋晓妹
Owner UNIV OF JINAN
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