Manufacturing process for eliminating crystal defects of aluminium electrode

Abstract

The invention relates to a manufacturing process for eliminating crystal defects of an aluminium electrode. The manufacturing process comprises the following steps of: forming an oxide layer on the surface of the aluminium electrode; covering a covering layer on the surface of the aluminium electrode, wherein the covering layer covers the oxide layer; and an opening having a required pattern shape is preset on the covering layer; exposing the aluminium electrode, the surface of which is covered by the covering layer, decomposing the oxide layer from a part exposed from the opening till the aluminium electrode having the required pattern shape is exposed, and removing the covering layer; and performing plasma treatment of first active gas, and introducing the first active gas onto the surface of the aluminium electrode having the preset pattern shape from the opening, so that a moisture-proof protective layer is formed. According to the manufacturing process for eliminating the crystal defects of the aluminium electrode disclosed by the invention, oxides on the surface of the aluminium electrode are decomposed by utilizing illumination; a high-molecular compound including fluorine is prevented from being introduced; therefore, formation of the crystal defects is eliminated from the source; the quality of the aluminium electrode is improved; and the manufacturing process of the aluminium electrode in the prior art is optimized.

Description

technical field [0001] The invention relates to the technical field of aluminum electrode manufacturing technology, in particular to a manufacturing technology for eliminating crystal defects of aluminum electrodes. Background technique [0002] In the prior art, in the dry etching passivation process of the aluminum electrode, a dielectric layer is basically grown on the aluminum electrode, and then an opening of a specific shape is etched on the surface of the aluminum electrode by dry etching, and exposed aluminum electrodes. Since the polymer compound containing fluorine element remains on the aluminum electrode during the dry etching process, it is still impossible to avoid the corrosion of the aluminum electrode by the residual fluorine in the overtime environment, resulting in the formation of crystal defects. Contents of the invention [0003] The technical problem to be solved by the present invention is to aim at the deficiencies of the above-mentioned prior art...

AI Technical Summary

Problems solved by technology

Since the polymer compound containing fluorine element remains on the aluminum electrode during the dry etching process, it is impossible to avoid the corrosion of the aluminum electrode by the residual fluorine in the overtime environment, resulting in the formation of crystal defects.

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