Optimizing the Properties of Transparent Conductive Thin Films by Ultrasonic Transducer Coupled with Laser Irradiation

A transparent conductive film, laser irradiation technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of harsh conditions, small performance optimization parameter range, etc., to achieve easy operation, widen the parameter range, and reduce laser irradiation conditions. Effect

Active Publication Date: 2017-09-05
东台城东科技创业园管理有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, the research on improving the properties of thin films by laser irradiation is very common (see literature: [1] M.F.Chen, K.Lin, and Y.S.Ho.Materials Science and Engineering B 176 (2011) 127-131; [2] W.Lin , S.Varlamov, J.Dore, and M.Green. Materials Letters 107(2013) 1–4; [3] S.F.Tseng, W.T.Hsiao, D.Chiang, K.C.Huang, and C.P.Chou. Applied Surface Science 257(2011) 7204–7209), but the conditions are harsh, and the parameter range for performance optimization is small, and the use of ultrasonic transducer coupled with laser irradiation can make up for its shortcomings

Method used

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  • Optimizing the Properties of Transparent Conductive Thin Films by Ultrasonic Transducer Coupled with Laser Irradiation
  • Optimizing the Properties of Transparent Conductive Thin Films by Ultrasonic Transducer Coupled with Laser Irradiation
  • Optimizing the Properties of Transparent Conductive Thin Films by Ultrasonic Transducer Coupled with Laser Irradiation

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Effect test

Embodiment 1

[0035] Embodiment 1: the power of the ultrasonic transducer that this embodiment selects is 100W, and frequency is 10kHz; The pulse width of the nanosecond pulse laser that adopts is 5~8ns, and wavelength is 355nm, and average power is 1.6W (for laser itself Intrinsic parameters, not adjustable), the laser pulse repetition frequency is 10Hz. Fix the pre-cleaned sample on the sample stage, adjust the laser workbench so that the surface of the FTO film sample is located at 0.5mm after the focus of the laser beam; control the energy density of the laser to 0.1J / cm 2 ; start the laser, make the laser beam perpendicular to the surface of the FTO film sample for large-scale scanning, to ensure that the spot overlap rate is 30%, and the scanning line overlap rate is 95%. The surface roughness of the untreated FTO film is 42.3 nm. figure 2 (a) is the AFM image of the FTO film after ultrasonic transduction coupling ultrashort pulse laser irradiation, the surface roughness is 30.9nm, ...

Embodiment 2

[0036] Embodiment 2: The power of the ultrasonic transducer selected in this embodiment is 300W, and the frequency is 40kHz; Intrinsic parameters, not adjustable), the laser pulse repetition frequency is 1kHz. Fix the pre-cleaned sample on the sample stage, adjust the laser workbench so that the surface of the FTO film sample is located at 2.0mm behind the focus of the laser beam; control the energy density of the laser to 0.4J / cm 2 ; start the laser, make the laser beam perpendicular to the surface of the FTO film sample for large-scale scanning, to ensure that the spot overlap rate is 90%, and the scanning line overlap rate is 80%. The surface roughness of the untreated FTO film is 42.3 nm. image 3 (a) is the AFM image of the FTO film after ultrasonic transduction coupling ultrashort pulse laser irradiation, and its surface roughness is 26.8nm, which is much lower than that before treatment, and the surface density of the film is also significantly improved; image 3 (b) ...

Embodiment 3

[0037] Embodiment 3: the power of the ultrasonic transducer selected in this embodiment is 600W, and frequency is 50kHz; The pulse width of the femtosecond pulsed laser that adopts is 130fs, and wavelength is 800nm, and average power is 2.5W (being the inherent parameter of laser device itself , not adjustable), the laser pulse repetition frequency is 1kHz. Fix the pre-cleaned sample on the sample stage, adjust the laser workbench so that the surface of the AZO film sample is located at 2.5mm after the focus of the laser beam; control the energy density of the laser to 0.8J / cm 2 ; Start the laser, make the laser beam perpendicular to the surface of the AZO film sample for large-area scanning, to ensure that the spot overlap rate is 60%, and the scanning line overlap rate is 60%. The surface roughness of the untreated AZO film was 37.2 nm. Figure 4 (a) is the AFM image of the AZO thin film after ultrasonic transduction coupling ultrashort pulse laser irradiation, its surface ...

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Abstract

The invention relates to the field of laser surface treatment and thin-film material preparation, especially relates to a method for optimizing transparent conducting thin film performance by utilizing a cooperation of ultrasonic transduction and ultrashort-pulse laser irradiation. The method comprises the steps: a transparent conducting thin film is arranged on the surface of an ultrasonic transducer, the laser irradiation is performed on the transparent conducting thin film, at the same time, the ultrasonic transducer vibrates in a direction vertical to laser irradiation, so that the transparent conducting thin film vibrates in small amplitude and high frequency along the surface in a normal direction, a distance between the thin film surface and a laser focus is periodically changed in a small way, a laser parameter range for optimizing transparent conducting thin film performance is extended, and the surface of the thin film is easy to have an anneal function; the surface of the transparent conducting thin film absorbs laser energy and melts, the energy generated by the vibration can ensure the thin film fusion field to generate a core in solidification process in advance, add crystal cores and refine crystal particles, so that the density of the thin film is increased, the surface microstructure of the thin film is improved, and the thin film performance optimization is realized at last.

Description

technical field [0001] The invention relates to the field of laser surface treatment and thin film material preparation, in particular to a method for optimizing the performance of transparent conductive thin films by utilizing ultrasonic energy conversion and ultrashort pulse laser irradiation, which can be applied to SnO 2 , ZnO, In 2 o 3 Transparent conductive film materials of its doping system (such as FTO, AZO, ITO). Background technique [0002] In the field of thin-film solar cells, the transparent conductive film as the front electrode of the battery undertakes the dual functions of conduction and light transmission. In order to obtain more excellent optical and electrical properties of transparent conductive films to meet the needs of practical applications, the surface optimization of various transparent conductive films prepared by traditional processes has attracted more and more attention. [0003] At present, there are many methods to optimize the optical a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18
CPCH01L31/1864H01L31/1884Y02P70/50
Inventor 李保家曹海迪黄立静祖伟任乃飞
Owner 东台城东科技创业园管理有限公司
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