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High-barrier function polyimide containing naphthaline structure and preparation method and application thereof

A technology of polyimide and polyimide film, which is applied in the field of material science to achieve the effect of low requirement, excellent barrier performance and simple preparation process

Inactive Publication Date: 2016-04-20
HUNAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The focus of the research on this system is to design and synthesize a new type of high-barrier polyimide containing naphthalene structure with high molecular chain rigidity and small free volume. Study on Design and Synthesis of Polyimide

Method used

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  • High-barrier function polyimide containing naphthaline structure and preparation method and application thereof
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  • High-barrier function polyimide containing naphthaline structure and preparation method and application thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] At room temperature, add 3.1040g (0.01mol) 4,4'-(naphthalene-2,7-diyl) dianiline (NPDA) and 38.8g (41ml) N,N-dimethylformamide into a 100ml three-necked flask , into the argon, stirring, after complete dissolution, add 2.1812g (0.01mol) Pyromelliticdianhydride (pyromellitic dianhydride, PMDA), continue to stir the reaction for 6h, to obtain a homogeneous transparent viscous polyamic acid solution. Then scrape and coat the polyamic acid solution on the glass plate, then place the glass plate in a vacuum oven, vacuumize, and the heating program is as follows: the temperature is raised from room temperature to 100°C, and then the whole process of constant temperature is 1h → 100°C is heated to 200°C, and then the whole process is constant Process 1h → 200°C, heat up to 300°C and then keep the temperature constant for the whole process 1h → 300°C, heat up to 400°C, then keep the temperature for 1h, the polyimide film can be taken out after cooling. The infrared spectrogram ...

Embodiment 2

[0040] At room temperature, 5.4865g (0.01mol) N 1 ,N 4 -bis(3'-amino-[1,1'-biphenyl]-4-yl)terephthalamide (NADPA) and 69.012g (73.1ml) N,N-dimethylformamide were added to a 100ml three-necked flask, and Inject argon, stir, and after complete dissolution, add 2.1812g (0.01mol) of pyromellitic dianhydride (pyromellitic dianhydride, PMDA), and continue stirring for 6 hours to obtain a homogeneous transparent and viscous polyamic acid solution. Then scrape and coat the polyamic acid solution on the glass plate, then place the glass plate in a vacuum oven, vacuumize, and the heating program is as follows: the temperature is raised from room temperature to 100°C, and then the whole process of constant temperature is 1h → 100°C is heated to 200°C, and then the whole process is constant Process 1h→200°C, heat up to 300°C and then keep constant temperature. The whole process 1h→300°C, heat up to 420°C, then keep constant temperature. The whole process is 1.5h. After cooling, the polyi...

Embodiment 3

[0044] At room temperature, 4.5856g (0.01mol) 4,4'-(((naphthalene-2,7-diylbis(oxy))-bis-(butane-4,1-diyl))-bis(oxy))dianiline( NOC 3 OPA) and 51.7g (54.7ml) N,N-dimethylformamide were added to a 100ml three-necked flask, argon was introduced, stirred, and after completely dissolving, 2.1812g (0.01mol) Pyromelliticdianhydride (pyromellitic acid Dianhydride, PMDA), continue stirring reaction 6h, obtain homogeneous transparent viscous polyamic acid solution. Then scrape and coat the polyamic acid solution on the glass plate, then place the glass plate in a vacuum oven, vacuumize, and the heating program is as follows: the temperature is raised from room temperature to 100°C, and then the whole process of constant temperature is 1h → 100°C is heated to 200°C, and then the whole process is constant Process 1h → 200°C, heat up to 300°C and then keep the temperature constant for the whole process 1h → 300°C, heat up to 400°C, then keep the temperature for 1h, the polyimide film can ...

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Abstract

The invention discloses a high-barrier function polyimide containing a naphthaline structure and a preparation method and application thereof. The polyimide adopts aromatic diamine with the high-planarity naphthaline structure and various kinds of dianhydride as raw materials, and the polyimide is prepared through thermal imidization or chemical imidization. Due to the fact that the lowest energy state structure of a diamine monomer has the high planarity, obtained polyimide molecular chains are compactly stacked and have the excellent barrier performance. The polyimide has the high rigidity and has the high glass-transition temperature, thermal stability and the lower coefficient of thermal expansion. The synthesis method is simple and varied in technology, and therefore the method is applicable to industrial production. The polyimide can be widely applied to the field of high and new technology industries such as high-performance packaging, protection and electronic device packaging.

Description

technical field [0001] The invention relates to the field of material science, in particular to a high-barrier functional polyimide containing a naphthalene structure and a preparation method and application thereof. technical background [0002] Since its birth, organic electroluminescent devices (OLEDs) have been favored by industry experts and consumers for their more accurate color perception, perfect viewing angle, and infinite contrast; and, the use of flexible polymer substrates Packaging OLED can realize bendable, foldable, and even wearable flexible display technology. Therefore, OLED is considered to be one of the most ideal and most promising new generation display devices. However, there is a bottleneck of short lifespan, because the polymer substrate materials currently used cannot well block water and oxygen in the atmosphere, and the organic functional layer of OLED is very sensitive to oxygen and water in the atmosphere, it is very difficult to Delamination ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08G73/10C08J5/18
CPCC08G73/1067C08G73/1007C08G73/1071C08J5/18C08J2379/08
Inventor 刘亦武曾义谭井华胡敏黄杰张海良陈洪魏珊珊刘跃军
Owner HUNAN UNIV OF TECH
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