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Angle broadband extreme ultraviolet multi-layer film having spectrum purification function

A spectral purification, multi-layer film technology, applied in the field of angle broadband extreme ultraviolet multi-layer film, can solve the problems of high cost, limited processing method of microstructure spectral purification technology, low success rate, etc., to reduce reflectivity and suppress spectrum. Purification function, simple structure effect

Inactive Publication Date: 2016-03-30
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Among them, the spectral purification technology of microstructure is limited by the processing method, the cost is extremely high, and the success rate is low. At present, most of them are theoretical designs.

Method used

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  • Angle broadband extreme ultraviolet multi-layer film having spectrum purification function
  • Angle broadband extreme ultraviolet multi-layer film having spectrum purification function
  • Angle broadband extreme ultraviolet multi-layer film having spectrum purification function

Examples

Experimental program
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Effect test

Embodiment

[0026] A non-periodic angular broadband EUV multilayer film 6 is designed by using film system design software. The substrate 1 is made of Si, and the optimization goal is to have as high a reflectivity as possible for a wavelength of 13.5nm in the range of 20° to 24°. A set of film structure is obtained, and its reflectivity is as follows figure 2 shown.

[0027] The thickness of the three surface layers (from top to bottom) of the film structure is 3.035nmMo, 4.438nmSi, and 3.156nmMo, and then the surface three layers are replaced by C, Si, C three-layer structure in turn, and the three-layer structure The thickness is optimized to obtain the thickness of the second spectral absorption layer C5 is 2.359nm, the thickness of the spacer layer Si4 is 4.751nm, the thickness of the spectral absorption layer C3 is a film structure of 2.404nm, and its reflectivity is as follows image 3 shown.

[0028] In order to specifically illustrate that the film structure has the function o...

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Abstract

The invention relates to an angle broadband extreme ultraviolet multi-layer film having a spectrum purification function, and belongs to the extreme ultraviolet photoetching technology field. The angle broadband extreme ultraviolet multi-layer film having the spectrum purification function is, from bottom to top, constituted by a substrate, an aperiodic MoSi alternately-arranged multi-layer film, a first spectrum absorption layer, a spacing layer, and a second spectrum absorption layer. The first spectrum absorption layer, the spacing layer, and the second spectrum absorption layer are used to form a spectrum purification structure layer. The multi-layer film is provided with a spectrum purification function. The angle broadband extreme ultraviolet multi-layer film is advantageous in that the spectrum purification layer is disposed on the aperiodic angle broadband extreme ultraviolet multi-layer, and then the spectrum purification function of inhibiting the deep ultraviolet waveband can be realized, and the extreme ultraviolet waveband reflectivity is basically not affected, and then the extreme ultraviolet waveband reflectivity can be reduced; the structure of the multi-layer film is simple, and the production method is simple.

Description

technical field [0001] The invention relates to the technical field of extreme ultraviolet lithography, in particular to an angular broadband extreme ultraviolet multilayer film with the function of spectral purification. Background technique [0002] Extreme ultraviolet lithography technology refers to an advanced micro-nano manufacturing technology that uses a 13.5nm wavelength light source to realize the photolithography process. The use of the extreme ultraviolet light source makes the lithography line width greatly reduced, which can greatly improve the integration of chip manufacturing, thereby reducing the size of the chip and reducing the energy consumption of the chip. At present, the international mainstream lithography process is completed by using 193nm ArF laser light source supplemented by multiple exposure technology, which can realize the 14nm line width lithography process. However, the complex process increases the cost of chip manufacturing, and at the sa...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B1/115G03F7/20
CPCG02B1/10G03F7/2004
Inventor 姚舜喻波金春水
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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