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Hexafluoropropylene-propyl PMO thin film and preparation method and application thereof

A technology of hexafluoropropane and hexafluoropropane is applied in the field of preparation of ordered mesoporous organosilicon thin films, which can solve the problems of low dielectric constant of PMO thin films, signal transmission delay, enhanced noise interference, etc. Constant, solve the signal transmission delay, reduce the effect of polarity

Active Publication Date: 2016-03-02
SHENZHEN INST OF ADVANCED TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The second technical problem to be solved by the present invention is to provide a kind of application of PMO thin film in VLSI, the specific PMO thin film used has ultra-low dielectric constant, thereby can solve the signal problem caused by high dielectric constant. Problems such as transmission delay, noise interference enhancement, power loss, etc.

Method used

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  • Hexafluoropropylene-propyl PMO thin film and preparation method and application thereof
  • Hexafluoropropylene-propyl PMO thin film and preparation method and application thereof
  • Hexafluoropropylene-propyl PMO thin film and preparation method and application thereof

Examples

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Embodiment 1

[0050] In this embodiment, when preparing the hexafluoropropane-based PMO film, the required raw materials are: 2,2-bis(3-amino-4-hydroxyphenyl)hexafluoropropane (BAHP), Thichner reagent, purity 95% , specification 25g; 3-(triethoxysilyl)propyl isocyanate (TPI), Aladdin reagent, purity 95%, specification 100g; acetone, Sinopharm reagent, dried by molecular sieves; ethanol, Sinopharm reagent, dried by molecular sieves; Hydrochloric acid, Sinopharm Reagent; Tetrapolyethylene glycol monolauryl ether Sigma reagent, average molecular weight 362, specification 100mL.

[0051] The preparation method of the hexafluoropropane-based PMO thin film of the present embodiment comprises the steps:

[0052] (1) Preparation of hexafluoropropane-based precursor molecular solution; respectively configure 2,2-bis(3-amino-4-hydroxyphenyl) hexafluoropropane (BAHP) acetone solution and isocyanate-3-(triethyl Acetone solution of oxysilyl)propyl ester (TPI). Wherein the concentration of the aceton...

Embodiment 2

[0070] The difference between the preparation method of the PMO film in this example and Example 1 is that the quality of the template is 25% of the molecular weight of the precursor; meanwhile, by adjusting the amount of ethanol and dilute hydrochloric acid, the precursor molecules in the coating solution The concentration is the same as in Example 1.

[0071] Other steps of the preparation method of the PMO thin film in this embodiment are the same as in Embodiment 1.

Embodiment 3

[0073] The difference between the preparation method of the PMO film in this example and Example 1 is that the quality of the template agent is 50% of the molecular weight of the precursor; at the same time, by adjusting the amount of ethanol and dilute hydrochloric acid, in the coating solution, the precursor molecules The concentration is the same as in Example 1.

[0074] Other steps of the preparation method of the PMO thin film in this embodiment are the same as in Embodiment 1.

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Abstract

The invention relates to a preparation method and application of a hexafluoropropylene-propyl PMO thin film. The preparation method includes the following steps that firstly, a hexafluoropropylene-propyl precursor molecular solution is prepared; under protection of dry nitrogen, an acetone solution of 2,2-bis(3-amino-4-hydroxyphenyl) hexafluoropropane is added into an acetone solution of isocyanat-3-(triethoxysilyl) propyl ester, a reaction is performed in an ice bath for 1.5-3 h, heating is performed till room temperature is achieved and preserved for 2-5 h, and the hexafluoropropylene-propyl precursor molecular solution is prepared; secondly, a film coating solution is prepared, wherein a template agent, a solvent and dilute hydrochloric acid are added into the precursor molecular solution, and the adding quantity of the template agent is 0-100%; thirdly, the PMO thin film is prepared; the surface of a substrate is coated with the film coating solution, the solution is cured, and the PMO thin film is prepared. According to the preparation method, by increasing the molecular pore volume, reducing molecular polarity and improving the crosslinking degree, the dielectric constant of the novel PMO thin film is reduced, and mechanical properties are guaranteed.

Description

technical field [0001] The invention relates to a method for preparing an ordered mesoporous organic silicon film, in particular to a method for preparing a hexafluoropropane-based PMO film, and also relates to the application of the ordered mesoporous organic silicon film prepared by the preparation method. Background technique [0002] In order to reduce the dielectric constant of the material, it has become a widely used experimental method to make porous dielectric materials by introducing air with a very low dielectric constant into the pores of the material. However, the introduction of pores also reduces the stability and thermal conductivity of the material. Therefore, it is necessary to establish a suitable model theoretically to guide experiments and predict the impact of porosity on thermal and electrical properties. [0003] The preparation of porous low dielectric materials usually includes sol-gel method, in-situ grafting method and template method. Among them...

Claims

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Application Information

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IPC IPC(8): C08J5/18C08J9/26C08L83/08C08G77/26H01L23/532
CPCC08J5/18C08G77/26C08J9/26C08J2383/08C08L83/08C08L2203/16H01L23/5329
Inventor 张国平孙蓉张贾伟
Owner SHENZHEN INST OF ADVANCED TECH CHINESE ACAD OF SCI
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