A back electrode structure of flexible cigs thin film solar cells

A technology of thin-film solar cells and thin-film structures, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as adding barrier layers, failure, and film removal, so as to reduce process links, overcome poor bonding force, and improve film-forming quality Effect

Active Publication Date: 2017-11-03
BEIJING SIFANG CRENERGEY OPTOELECTRONICS TECH CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But the existence of the barrier layer will bring some problems
On the one hand, the poor bonding force between the barrier material and the flexible substrate and the Mo bottom electrode will lead to cracking of the CIGS battery on the flexible substrate, or even de-filming, and eventually failure; on the other hand, some barrier elements themselves are also Will diffuse into the absorbing layer, resulting in a decrease in the photoelectric performance of the absorbing layer
In addition, increasing the barrier layer also increases the complexity of equipment and process

Method used

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  • A back electrode structure of flexible cigs thin film solar cells
  • A back electrode structure of flexible cigs thin film solar cells
  • A back electrode structure of flexible cigs thin film solar cells

Examples

Experimental program
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Effect test

Embodiment 1

[0022] Such as figure 2 Shown is a schematic diagram of the structure of the back electrode of the flexible CIGS solar cell of the present invention. After the flexible stainless steel substrate 10 is cleaned, put it into a magnetron sputtering machine, the substrate is not heated, and the background vacuum reaches 3×10 -3 When it is below Pa, feed high-purity argon, adjust the air pressure to 1Pa, and the power density to 2.5W / cm 2 , on the flexible stainless steel substrate 10, a layer of 0.12 μm thick Mo film layer 20 is sputtered; after the first layer of Mo is completed, the air pressure is adjusted to 0.8Pa, and the power density is 3W / cm 2 , sputtering a layer of Mo film layer 21 with a thickness of 0.08 μm; after completing the second layer of Mo, adjust the air pressure to 0.3Pa, and the power density to 3.5W / cm 2 , sputtering a layer of 0.6 μm thick Mo film layer 22; the total thickness of the Mo layer is about 0.8 μm, and the resistivity is 3.8×10 -5 Ω·cm, its c...

Embodiment 2

[0024] After cleaning the flexible copper foil substrate, put it into the magnetron sputtering machine, and wait for the local vacuum to reach 3×10 -3 When it is below Pa, feed high-purity argon, adjust the air pressure to 0.3Pa, and the power density to 2.5W / cm 2 , on the flexible copper foil substrate 10, start sputtering a layer of 0.12 μm thick molybdenum film layer; after the first layer of Mo is completed, adjust the air pressure to 0.8Pa, and the power density to 3W / cm 2 , under this process, a layer of molybdenum film with a thickness of 0.08μm is sputtered; after the second layer of Mo is completed, the air pressure is adjusted to 1.2Pa, and the power density is 3.5W / cm 2 , under this process, a layer of molybdenum film with a thickness of 0.6 μm is sputtered. After the third layer of Mo is completed, the air pressure is adjusted to 1.5Pa and the power density is 4W / cm 2 , under this process, sputtering a layer of molybdenum film with a thickness of 0.2 μm, which is ...

Embodiment 3

[0027] After cleaning the flexible aluminum foil, put it into magnetron sputtering, and wait for the local vacuum to reach 3×10 -3 When it is below Pa, feed high-purity argon, adjust the air pressure to 0.3Pa, and the power density to 2.5W / cm 2 , on the flexible stainless steel substrate 10, start sputtering a layer of 0.12 μm thick molybdenum film layer 20; after the first layer of Mo is completed, adjust the air pressure to 0.8Pa, and the power density to 3W / cm 2 , under this process, a layer of molybdenum film layer 21 with a thickness of 0.08 μm is sputtered; after the second layer of Mo is completed, the air pressure is adjusted to 1.2Pa, and the power density is 3.5W / cm 2 , under this process, a layer of molybdenum thin film 22 with a thickness of 0.6 μm is sputtered. After the third layer of Mo is completed, the air pressure is adjusted to 1.5 Pa, and the power density is 4 W / cm 2 , under this process, a layer of molybdenum film layer 23 with a thickness of 0.2 μm is s...

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Abstract

The invention provides a back electrode structure of a flexible CIGS thin-film solar cell. The preparation method is characterized in that a multi-layer Mo thin film is deposited on a flexible substrate to form a back electrode by using a magnetron sputtering method; a CIGS absorption layer, a CdS buffer layer, an intrinsic ZnO layer, an AZO layer, a Ni-Al gate electrode are prepared on the Mo back electrode successively, thereby forming a flexible CIGS thin-film solar cell device with a structure containing the flexible substrate, the multi-layer Mo back electrode, the CIGS absorption layer, the Cds buffer layer, the i-ZnO window layer, the AZO transparent conductive layer, and the Ni-Al gate electrode successively. According to the invention, because the multi-layer Mo back electrode is prepared on the flexible substrate and is used as the back electrode layer, the good electrical conductivity is realized and impurity element diffusion and penetration on the CIGS thin film in the substrate material can be effectively avoided, so that the blocking layer effect is realized. The blocking layer needed in the traditional flexible battery preparation method is not required. The process is simple and is easy to control; the film uniformity is good; and the industrial scale production can be realized.

Description

technical field [0001] The invention belongs to the technical field of thin-film solar cells, in particular to a technical method for preparing a multilayer structure back electrode on a flexible substrate. Background technique [0002] Copper indium gallium selenide (CIGS for short) thin-film solar cells are low in cost, stable in performance, strong in radiation resistance, and wide in spectral response range. One of the promising cheap solar cells, which has the potential to become one of the mainstream products of photovoltaic cells in the future. At present, the typical structure of CIGS thin-film solar cells includes substrate (soda-lime glass, stainless steel, polyimide, etc. can be used), molybdenum film on the back electrode, CIGS film on the absorber layer, CdS film on the buffer layer, intrinsic ZnO film and AZO film on the window layer Thin film, gate electrode Ni-Al alloy thin film, anti-reflection layer MgF 2 film. [0003] At present, the methods for prepar...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0224H01L31/032
CPCH01L31/022425H01L31/0322Y02E10/541
Inventor 张宁余新平张伟孙哲
Owner BEIJING SIFANG CRENERGEY OPTOELECTRONICS TECH CO LTD
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