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Gallium and scandium co-doping zinc oxide scintillation single crystal and preparation method thereof

A technology of zinc oxide and single crystal, applied in the field of gallium scandium co-doped zinc oxide scintillation single crystal and its preparation, can solve the problems of matching photoelectric conversion components and stable load voltage, different magnitudes, etc., and achieve excellent crystal quality , high compatibility, good doping uniformity

Active Publication Date: 2016-02-03
桂林百锐光电技术有限公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Even the fully grown ZnO:Ga single crystal has distinctly different Ga planes and O planes. There is a big difference in the crystal quality of the two crystal planes, and the magnitude of the resistivity test is also different. It is difficult to match optoelectronics in actual device development. Converting components and stabilizing load voltage

Method used

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  • Gallium and scandium co-doping zinc oxide scintillation single crystal and preparation method thereof
  • Gallium and scandium co-doping zinc oxide scintillation single crystal and preparation method thereof
  • Gallium and scandium co-doping zinc oxide scintillation single crystal and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] (1) Take 250g of zinc oxide as a raw material, after ultrasonic cleaning, dry in an oven at 80°C, and then place it at the bottom of the platinum liner;

[0033] (2) Add 0.014g of Ga to the bushing 2 o 3powder (accounting for 0.005mol% of zinc oxide raw material consumption);

[0034] (3) Add 0.105g of Sc to the bushing 2 o 3 Powder (accounting for 0.05mol% of zinc oxide raw material consumption);

[0035] (4) fill mineralizer by 80% filling degree in liner pipe, described mineralizer is the aqueous solution of KOH and LiOH, and in this mineralizer, the concentration of KOH is 4mol / L, and the concentration of LiOH is 0.1mol / L;

[0036] (5) Use a platinum wire to suspend the pure ZnO seed wafer whose seed orientation is the (0001) crystal plane under the top cover of the liner tube;

[0037] (6) Seal the liner pipe, put into the autoclave subsequently, fill 75% pure water between the liner pipe and the interlayer of the autoclave, then seal the autoclave;

[0038]...

Embodiment 2

[0046] (1) Weigh 120g of zinc oxide raw material, after ultrasonic cleaning, dry in an oven at 100°C, and then place it at the bottom of the platinum liner;

[0047] (2) Add 0.028g of GaCl to the bushing 3 powder (accounting for 0.02mol% of zinc oxide raw material consumption);

[0048] (3) Add 0.027g of Sc(NO 3 ) 3 Powder (accounting for 0.02mol% of zinc oxide raw material consumption)

[0049] (4) fill mineralizer by 65% ​​filling degree in liner pipe, described mineralizer is the aqueous solution of KOH and LiOH, and in this mineralizer, the concentration of KOH is 4mol / L, and the concentration of LiOH is 0.1mol / L;

[0050] (5) Use a platinum wire to suspend the pure ZnO seed wafer whose seed orientation is the (0001) crystal plane under the top cover of the liner tube;

[0051] (6) seal liner pipe, put into autoclave subsequently, fill 65% pure water between the interlayer of liner pipe and autoclave, seal autoclave afterwards;

[0052] (7) Put the sealed autoclave i...

Embodiment 3

[0055] (1) Take 200g of zinc oxide as a raw material, after ultrasonic cleaning, dry in an oven at 80°C, and then place it at the bottom of the platinum liner;

[0056] (2) Add 0.0237g of Ga(OH) to the bushing tube 3 (accounting for 0.008mol% of zinc oxide raw material consumption);

[0057] (3) Add 0.0145g of ScN powder (accounting for 0.01mol% of zinc oxide raw material consumption) in the bushing tube

[0058] (4) Fill the liner pipe with a mineralizer at a filling degree of 50%. The mineralizer is an aqueous solution of KOH, and in the mineralizer, the concentration of KOH is 8mol / L;

[0059] (5) Use a platinum wire to suspend the pure ZnO seed wafer whose seed orientation is the (1010) crystal plane under the top cover of the liner tube;

[0060] (6) Seal the liner pipe, put into the autoclave subsequently, fill 50% pure water between the liner pipe and the interlayer of the autoclave, then seal the autoclave;

[0061] (7) Put the sealed autoclave in a two-stage resist...

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Abstract

The invention discloses a gallium and scandium co-doping zinc oxide scintillation single crystal and a preparation method thereof. ZnO and GaXScY of the gallium and scandium co-doping zinc oxide scintillation single crystal contain two doped ions which are Ga3+ and Sc3+, wherein the final doping concentration X of Ga3+ in the zinc oxide scintillation single crystal is 1-1000 ppm, and the final doping concentration Y of Sc3+ in the zinc oxide scintillation single crystal is 10-10000 ppm. According to the preparation method, zinc oxide serves as a raw material, and the gallium and scandium co-doping zinc oxide scintillation single crystal is generated by adopting a hydrothermal method. The gallium and scandium co-doping zinc oxide scintillation single crystal is excellent in scintillation and physical performance, and large-size high-quality single crystal is obtained easily through growth.

Description

technical field [0001] The invention relates to a doped zinc oxide scintillation single crystal, in particular to a gallium-scandium co-doped zinc oxide scintillation single crystal and a preparation method thereof. Background technique [0002] Scintillation crystal material is a functional material that absorbs high-energy particles and emits visible light. As the core material of conventional and special scintillation detectors, it is widely used in imaging nuclear medicine (PET), nuclear physics and high-energy physics, industrial CT, oil well exploration, Safety audit, nuclear space physics, nuclear metrology and other important fields. Compared with scintillation materials such as ordinary plastics, liquids, liquid crystals, and phosphors, inorganic scintillation crystals have remarkable characteristics such as high density, small size, excellent physical and chemical properties, and scintillation properties, which make them occupy an important position in all practica...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/16C30B7/10
Inventor 任孟德左艳彬王金亮周海涛何小玲陈超张昌龙林峰
Owner 桂林百锐光电技术有限公司
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