Highly c-axis oriented aluminum nitride film and its preparation method and application

A film and orientation technology, applied in the field of high c-axis oriented aluminum nitride film and its preparation, can solve problems such as process compatibility, achieve the effects of low surface roughness, simple method and improved texture strength

Active Publication Date: 2017-10-03
TSINGHUA UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Its process is difficult to be compatible with the traditional CMOS (Complementary Metal Oxide Semiconductor) process

Method used

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  • Highly c-axis oriented aluminum nitride film and its preparation method and application
  • Highly c-axis oriented aluminum nitride film and its preparation method and application
  • Highly c-axis oriented aluminum nitride film and its preparation method and application

Examples

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Embodiment 1

[0041] Example 1. Depositing a high c-axis orientation 2.5 μm aluminum nitride film on a polyimide substrate covered with a molybdenum disulfide buffer layer by DC reactive magnetron sputtering at room temperature

[0042] 1) A polyimide substrate with a thickness of 125 μm was bonded to a glass substrate, and then ultrasonically cleaned with acetone, alcohol and deionized water for 4 minutes respectively, and then dried with nitrogen. Put the flexible substrate-polyimide substrate that has been cleaned and dried on the glass substrate into the plasma etching machine, and vacuum the background to 10 -4 Below Pa. Refill high-purity argon to make the pressure of the whole system 10 -2 Pa, adjusting screen electrode voltage, accelerating voltage, anode voltage and cathode current are 710V, 100V, 60V and 12A, respectively. Open the baffle, etch with argon plasma for 5 minutes, let stand for more than 10 minutes after etching, fill with high-purity nitrogen, and take out the poly...

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Abstract

The invention discloses a high c-axis oriented AlN thin film, a preparation method and application thereof. The preparation method of the high c-axis orientation AlN thin film provided by the present invention comprises the following steps: spin coating molybdenum disulfide on a flexible substrate to obtain a substrate covered with molybdenum disulfide; The AlN thin film is obtained by depositing on the substrate; the working gas of the reactive sputtering is a mixed gas of nitrogen and argon; the target material of the reactive sputtering is an aluminum target. The present invention uses molybdenum disulfide as the buffer layer to effectively alleviate the problems of lattice mismatch and thermal expansion coefficient mismatch between the substrate layer and the AlN layer, so that the stress in the AlN film prepared by the present invention is relatively low. The thin film has high c-axis orientation, high piezoelectric coefficient d33 and low surface roughness, and can be applied in fields such as flexible electronics.

Description

technical field [0001] The invention relates to a high c-axis oriented aluminum nitride film and its preparation method and application, belonging to the technical field of information electronic materials. Background technique [0002] In the past few decades, flexible electronics have attracted extensive attention due to their light weight, cheapness, and disposable use. It has been widely used in flat panel display, sensing, biology and other fields. Aluminum nitride can be widely used in surface acoustic wave devices, Various sensors and energy collectors. Through the piezoelectric properties of the material, the acoustic-electric and force-electric conversion is carried out, and information transmission, processing and energy conversion are carried out. [0003] Traditional aluminum nitride films are deposited on rigid substrates, such as diamond, sapphire, and single crystal silicon substrates. But these substrates are high hardness, rigid and inflexible and expens...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/06C23C14/34
Inventor 曾飞李起潘峰傅肃磊
Owner TSINGHUA UNIV
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