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Method for depositing high c-axis orientation aluminum nitride film on flexible substrate

A flexible substrate, aluminum nitride technology, applied in the direction of ion implantation plating, metal material coating process, coating, etc., can solve the problem of weak surface bonding force, to improve mechanical bonding force, increase texture strength, The effect of increasing the roughness

Active Publication Date: 2017-06-16
TSINGHUA UNIV +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it is usually difficult to directly deposit high c-axis oriented aluminum nitride films on flexible organic substrates, and its binding force with the substrate surface is weak

Method used

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  • Method for depositing high c-axis orientation aluminum nitride film on flexible substrate
  • Method for depositing high c-axis orientation aluminum nitride film on flexible substrate
  • Method for depositing high c-axis orientation aluminum nitride film on flexible substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] Example 1. Deposition of a high c-axis orientation 5 μm aluminum nitride film on a polyimide substrate by DC reactive magnetron sputtering at room temperature

[0037] 1) The polyimide substrate was glued on the glass substrate, and then ultrasonically cleaned with acetone, alcohol and deionized water for 4 minutes respectively, and then dried with nitrogen. Put the flexible substrate-polyimide substrate that has been cleaned and dried on the glass substrate into the plasma etching machine, and vacuum the background to 10 -4 Below Pa. Refill high-purity argon to make the pressure of the whole system 10 -2 Pa, adjusting screen electrode voltage, accelerating voltage, anode voltage, and cathode current are 710V, 100V, 60V, and 12A, respectively. Open the baffle, etch with argon plasma for 5 minutes, let stand for more than 10 minutes after etching, fill with high-purity nitrogen, and take out the polyimide substrate etched with argon plasma.

[0038] 2) Fix the plasma-...

Embodiment 2

[0047] Example 2. Deposition of a high c-axis orientation 2 μm aluminum nitride film on a polyimide substrate by room temperature DC reactive magnetron sputtering

[0048] 1) The polyimide substrate was glued on the glass substrate, and then ultrasonically cleaned with acetone, alcohol and deionized water for 4 minutes respectively, and then dried with nitrogen. Put the flexible substrate-polyimide substrate that has been cleaned and dried on the glass substrate into the plasma etching machine, and vacuum the background to 10 -4 Below Pa. Refill high-purity argon to make the pressure of the whole system 10 -2 Pa, adjusting screen electrode voltage, accelerating voltage, anode voltage, and cathode current are 710V, 100V, 60V, and 12A, respectively. Open the baffle, etch with argon plasma for 5 minutes, let stand for more than 10 minutes after etching, fill with high-purity nitrogen, and take out the polyimide substrate etched with argon plasma.

[0049] 2) Fix the plasma-etc...

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Abstract

The invention relates to a method for depositing a high c-axis orientation aluminum nitride membrane on a flexible substrate. The method comprises the following steps: sequentially washing the flexible substrate by using a chemical reagent and plasma, putting the washed flexible substrate on a substrate table of a magnetron sputtering coater, vacuuming, introducing working gas and carrying out reactive sputtering to obtain the aluminum nitride membrane. The method disclosed by the invention is simple and has low cost, the selected substrate is made of a flexible material, the aluminum nitride membrane prepared according to the method is bendable, has high c-axis orientation and high d33 piezoelectric coefficient, the surface roughness can be reduced and the bonding force with the substrate is improved; and the method can be used for preparing flexible surface acoustic wave devices.

Description

technical field [0001] The invention belongs to the technical field of information electronic materials, in particular to a method for depositing a high c-axis orientation aluminum nitride film on a flexible substrate. Background technique [0002] In the past few decades, flexible electronics have attracted extensive attention due to their light weight, cheapness, and disposable use. It has been widely used in flat panel display, sensing, biology and other fields. Aluminum nitride can be widely used in surface acoustic wave devices, Various sensors and energy collectors. Through the piezoelectric properties of the material, the acoustic-electric and force-electric conversion is carried out, and information transmission, processing and energy conversion are carried out. [0003] Traditional aluminum nitride films are deposited on rigid substrates, such as diamond, sapphire, and single crystal silicon substrates. But these substrates are high hardness, rigid and inflexibl...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/06
Inventor 李起曾飞潘峰高双
Owner TSINGHUA UNIV
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