Measurement method, etching method and formation method of semiconductor device

Abstract

The present invention provides a measurement method, an etching method and a forming method for a semiconductor device, wherein the semiconductor device is obtained by dry etching using an organic anti-reflective layer as an etching barrier layer. The method is performed at a preset temperature, The semiconductor device is heat-treated within a preset time, and then the measuring machine performs optical critical dimension measurement on the heat-treated semiconductor device; wherein, during the heat treatment process, the photoresist in the semiconductor device itself contains The solvent and water are volatilized, and the photoresist surface forms a shell that does not allow electron adsorption. The shell formed on the surface of the semiconductor device after the heat treatment is relatively hard and smooth, and electron adsorption does not occur. Optical critical dimension measurement will It is relatively clear and accurate, which can fundamentally solve the problem of inaccurate measurement, without the need for slice verification, greatly improving process control capabilities and saving high costs.

Description

technical field [0001] The invention relates to the technical field of semiconductor packaging equipment, in particular to a measuring method, an etching method and a forming method of a semiconductor device. Background technique [0002] Using the organic anti-reflective layer as a mask (ie, etch barrier layer) for dry etching (Barc Open) as a key process step for forming a low-voltage gate oxide layer (LV oxide) for a dual gate (Dual Gate) device, its critical dimension (CD) Measurement is very important for process control, but since the wafer is directly measured for CD after dry etching without dry debonding and wet cleaning, the surface of the wafer (wafer) continues to accumulate under electron beam irradiation. The charge repulses the electron beam, which eventually causes the surface of the wafer to be out of focus under the lens, the measuring machine cannot distinguish the measurement pattern, and the CD measurement cannot obtain the correct value. [0003] Takin...

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Problems solved by technology

[0005] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a measurement method, an etching method and a forming method of a semiconductor device, so as to solve the problem of semiconductor devices caused by dry etching using an organic anti-reflection layer as an etching barrier layer in the prior art. The problem of inaccurate critical dimension optical measurement (CD measurement)

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