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Seeding method for growth of sapphire crystal with KY (Kyropoulos) method

A technology of sapphire crystal and Kyropoulos method, which is applied in the direction of single crystal growth, crystal growth, single crystal growth, etc., can solve the problems of poor crystal quality, seeding does not completely eliminate dislocations, etc., to improve crystal yield and increase energy The effect of loss, defect and dislocation elimination

Inactive Publication Date: 2015-11-04
JIANGSU CEC ZHENHUA CRYSTAL TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The seeding problem of the existing Kyropoulos technology still exists, which is mainly manifested in that the seeding does not completely eliminate dislocations, resulting in poor crystal quality

Method used

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  • Seeding method for growth of sapphire crystal with KY (Kyropoulos) method
  • Seeding method for growth of sapphire crystal with KY (Kyropoulos) method
  • Seeding method for growth of sapphire crystal with KY (Kyropoulos) method

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Effect test

Embodiment 1

[0035] The present invention is a seeding method for growing sapphire crystals by Kyropoulos method, said method comprising the steps of:

[0036] Step 1: Set as image 3 The non-rotationally symmetrical structure of the opening shown adopts the non-rotationally symmetrical included angle structure, and the upper heat reflecting structure with an included angle of 75 degrees is installed in the Kyropoulos sapphire growth equipment;

[0037] Step 2: Vacuum the crystal growth furnace loaded with raw materials to a vacuum of ~10 -3 Pa;

[0038] Step 3: Control the temperature of the crystal growth furnace to 2000-2100°C through a heater, and wait until the sapphire raw material is melted into a melt.

[0039]Step 4: Put the seed crystal, test the temperature, adjust the power or voltage, so that the seed crystal does not melt and grow when it contacts the melt, dip the seed crystal into the liquid surface of the melt for 3mm; use the pulling speed of 3mm / h, 1mm The instant...

Embodiment 2

[0044] The present invention is a seeding method for growing sapphire crystals by Kyropoulos method, said method comprising the steps of:

[0045] Step 1: Set as Figure 4 The non-rotationally symmetrical structure of the opening shown is installed in the Kyropoulos sapphire growth equipment with a "T"-shaped upper heat reflection structure rotated 90 degrees counterclockwise;

[0046] Step 2: Vacuum the crystal growth furnace loaded with raw materials to a vacuum of ~10 -3 Pa;

[0047] Step 3: Control the temperature of the crystal growth furnace to 2000-2100°C through a heater, and wait until the sapphire raw material is melted into a melt.

[0048] Step 4: Put the seed crystal, test the temperature, adjust the power or voltage, so that the seed crystal does not melt and grow when it contacts the melt, dip the seed crystal into the liquid surface of the melt for 3mm; use the pulling speed of 6mm / h, 1mm The instant lifting height and the clockwise rotation at a given a...

Embodiment 3

[0053] The present invention is a seeding method for growing sapphire crystals by Kyropoulos method, said method comprising the steps of:

[0054] Step 1: Set as Figure 5 The non-rotationally symmetrical structure of the opening shown is installed in the Kyropoulos sapphire growth equipment with an "L"-shaped upper heat reflection structure;

[0055] Step 2: Vacuum the crystal growth furnace loaded with raw materials to a vacuum of ~10 -3 Pa;

[0056] Step 3: Control the temperature of the crystal growth furnace to 2000-2100°C through a heater, and wait until the sapphire raw material is melted into a melt.

[0057] Step 4: Put the seed crystal, test the temperature, adjust the power or voltage so that the seed crystal does not melt and grow when it contacts the melt, dip the seed crystal into the liquid surface of the melt for 5mm; use the pulling speed of 8mm / h, 1mm The instantaneous lifting height and the counterclockwise rotation of a given angle of 15 degrees are ...

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Abstract

The invention relates to a seeding method for growth of sapphire crystal with a KY (Kyropoulos) method. A non-rotating symmetric structure of a radiation heat dissipation opening of seed crystal is used, and the seeding method comprises following steps during seeding: (1), the seed crystal is immersed 3-5 mm below the liquid level of melt; (2), a crystal plate grows out from the seed crystal preferentially towards one side after the heat dissipation opening adopting the non-rotating symmetric structure dissipates heat; (3), the seed crystal is lifted and pulled at an average lifting and pulling speed being 3-12 mm / h, alternate instant lifting is adopted in the lifting and pulling process, the seed crystal is rotated by a given angle, and a crystal plate grows out again in the heat dissipation direction after alternate instant lifting, so that next instant lifting is facilitated; (4), the step (3) is carried out repeatedly until the length of a crystal section reaches 60-80 mm, the crystal section adopting a spiral structure is formed, and when the equivalent diameter of the cross section of a solid-liquid interface reaches 40-60 mm, seeding is finished. The seeding method has the advantages as follows: the spiral seeding structure can be obtained, defects and dislocation of the seed crystal can be eliminated to the largest extent, breaking cannot be caused easily, the yield of crystal can be increased, and industrial production is facilitated.

Description

technical field [0001] The invention belongs to the technical field of crystal growth, and relates to a seeding method for crystal growth, in particular to a seeding method for growing sapphire crystals by a Kyropoulos method. Background technique [0002] The composition of sapphire is aluminum oxide (Al 2 o 3 ), which is composed of three oxygen atoms and two aluminum atoms combined by covalent bonds, and its crystal structure is a hexagonal lattice structure. Because sapphire has the characteristics of high sound velocity, high temperature resistance, corrosion resistance, high hardness, high light transmission, and high melting point (2045°C), it is often used as a material for optoelectronic components. At present, the quality of ultra-high-brightness white / blue LEDs depends on the material quality of the GaN epitaxial layer (GaN), and the quality of the GaN epitaxial layer is closely related to the surface processing quality of the sapphire substrate used. Since sa...

Claims

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Application Information

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IPC IPC(8): C30B29/20C30B17/00
Inventor 李东振马远邱一豇吴勇周健杰
Owner JIANGSU CEC ZHENHUA CRYSTAL TECH
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