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Method for constructing solution processing light emitting diode based on Cu-doped multi-element quantum dots

A technology of quantum dot solution and light-emitting diodes, which is applied in the manufacture of electrical components, electrical solid devices, semiconductor/solid devices, etc. It can solve the problems of poor uniformity of phosphor particles, impact on service life, lack of red light, etc., and meet the requirements of operating equipment Low cost, easy operation, good safety effect

Inactive Publication Date: 2015-10-21
NINGBO UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, phosphor luminescent materials have been widely used in LED lighting and display technology, but phosphor particles have poor uniformity, short life, and lack of red light, so they are still not the best LED luminescent materials.
Organic light-emitting diodes (OLEDs) are also a research hotspot for the new generation of LEDs. However, as the light-emitting layer, organic molecules are easily aged under the influence of Joule heat generated by electric drive, and the service life is affected to a certain extent.

Method used

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  • Method for constructing solution processing light emitting diode based on Cu-doped multi-element quantum dots
  • Method for constructing solution processing light emitting diode based on Cu-doped multi-element quantum dots
  • Method for constructing solution processing light emitting diode based on Cu-doped multi-element quantum dots

Examples

Experimental program
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Effect test

preparation example Construction

[0045] Preparation of Se precursor solution

[0046] Take by weighing selenium powder simple substance 1mmol (selenium powder simple substance consumption can also be 2,3,4,5,6,7,8,9,10,11,12,2.9,3.3,4.1,5.3,6.2,7.3,8.7, 9.4, 10.6, 11.5, 1.2 and other arbitrary values ​​within the range of 1-12mmol) were dissolved in the mixed solution of 10ml of octadecene ODE and organic amine ligand (oleylamine (OLA)) (wherein the volume ratio of ODE and OLA is 1:1) to form a homogeneous mixed solution.

[0047] The volume ratio of ODE to OLA in the mixed solution of octadecenyl ODE and organic amine ligand (oleylamine (OLA)) can also be 1:2, 1:3, 1:4, 1:5, 1:1.2, 1 :3.5, 1:2.1.

[0048] Preparation of Zn precursor solution

[0049] Take by weighing zinc salt (zinc acetate, zinc salt can also be one or more mixtures in zinc chloride, zinc stearate, diethyldithiocarbamate zinc) 1mmol (zinc salt consumption can also be 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 2.9, 3.3, 4.1, 5.3, 6.2, 7.3, 8.7,...

Embodiment 1

[0053] Preparation of quantum dots

[0054] Weigh CuCl (4mg, 0.04mmol, copper salt can also be one or more mixtures of copper chloride, copper acetate, cuprous iodide), In(Ac) 3 (58mg 0.2mmol, the indium salt can also be one or a mixture of indium chloride and indium nitrate), Zn(Ac) 2 (36mg 0.2mmol, the zinc salt can also be one or a mixture of zinc chloride, zinc nitrate, zinc stearate) DDT (1mL), OLA (1mL) and ODE (5mL) were added to a 100mL three-neck in the bottle. The high-purity argon atmosphere in the bottle is ensured by repeated vacuuming and recirculation of argon. Raise the temperature from room temperature to 100°C for 20 minutes to remove residual water molecules and low-boiling organic matter, and obtain a transparent solution. Then the temperature was raised to 220°C and kept for 10 minutes. The selenium (Se) precursor solution (including 63mg (0.8mmol) Se, 1mL ODE and 1mL oleylamine (OLA)) was quickly injected into the three-necked bottle, and kept growing...

Embodiment 2

[0059] The assembly of the QD-LED in this embodiment is based on the substrate 2 provided with the ITO sheet 1 (the sheet resistance of the ITO sheet is ~20V sq-1), and the substrate of the ITO sheet is successively washed with acetone, absolute ethanol and deionized water Ultrasonic treatment for 10 minutes each, and then use an ultraviolet lamp to generate ozone in the air for 3 minutes. The NiO nanoparticle layer 3 was spin-coated on the substrate, and then baked in air at 180 °C for 10 min. Then spin-coat the hole transport layer 4poly(N,N9-bis(4-butylphenyl)-N,N9-bis(phenyl)-benzidine)(poly-TPD), the light-emitting layer 5Cu-doped multi-component quantum dot layer and the electron transport layer in sequence. Layer 6 ZnO nanoparticle layer. Poly-TPD is a hole transport layer, which is spin-coated with Chlobenzene solution (2000rpm, 50s) with a concentration of 1.3wt%, and then baked at 100°C for 30min. The layer of Cu-doped multi-component quantum dots (12mg / ml, toluene...

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Abstract

The invention discloses a method for constructing a solution processing light emitting diode based on Cu-doped multi-element quantum dots, comprising the following steps: (1) preparing Cu-doped multi-element quantum dots; and (2) performing QD-LED constructing, including base preparation and electrode preparation. Base preparation includes the steps of performing ultrasonic treatment on an ITO sheet base in acetone, anhydrous ethanol and deionized water in sequence, and carrying out surface treatment with ozone to obtain a pre-treated ITO sheet base. Electrode preparation includes the steps of spin-coating the pre-treated ITO sheet base with a poly (3,4-ethylenedioxythiophene): polystyrene sulfonate layer and drying the poly (3,4-ethylenedioxythiophene): polystyrene sulfonate layer, then, sequentially spin-coating the pre-treated ITO sheet base with a hole transport layer, a light emitting layer and an electron transport layer to obtain a multilayer substrate, and depositing an anode on the multilayer substrate in a vacuum environment, wherein the light emitting layer is a Cu-doped multi-element quantum dot layer, and the electron transport layer is a metal oxide nanoparticle layer. The conditions are safe and simple, a full-solution processing technology is adopted basically, and the operation is convenient.

Description

technical field [0001] The invention relates to a method for preparing a quantum dot light-emitting diode, in particular to a method for constructing a light-emitting diode based on Cu-doped multi-element quantum dot solution processing. [0002] The pressure unit of torr, 1Torr refers to "the pressure to lift the mercury in the thin straight tube by one millimeter", here 1torr≈133.322Pa. Background technique [0003] With the global energy crisis and people's increasing awareness of energy conservation and environmental protection, a large number of energy-saving and environmentally friendly materials have entered our lives. Light-emitting diodes (LEDs) replace traditional lighting display materials and become a new generation of lighting sources due to the advantages of low energy consumption, low heat generation, and long life. At present, phosphor luminescent materials have been widely used in LED lighting and display technology, but phosphor particles have poor uniform...

Claims

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Application Information

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IPC IPC(8): H01L51/56
CPCH10K71/164H10K71/60
Inventor 郑金桔曹盛王霖高凤梅尚明辉杨祚宝杨为佑
Owner NINGBO UNIVERSITY OF TECHNOLOGY
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