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Method for direct and rapid preparation of single-layer graphene on SiO2/Si substrate

A single-layer graphene and substrate technology, applied in the field of direct and rapid preparation of single-layer graphene on SiO2/Si substrate, can solve problems such as high background vacuum, and achieve the effect of simplifying synthesis and simple and fast preparation process

Inactive Publication Date: 2015-09-16
HANSHAN NORMAL UNIV
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  • Abstract
  • Description
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Problems solved by technology

The above two methods are based on the chemical vapor deposition technology, and the rapid heating method is used to realize the preparation of graphene, but this preparation method needs to dilute CH with hydrogen. 4 As a carbon source, a high background vacuum is required for growth, and the carrier mobility of the prepared graphene is only 580cm 2 V -1 the s -1

Method used

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  • Method for direct and rapid preparation of single-layer graphene on SiO2/Si substrate
  • Method for direct and rapid preparation of single-layer graphene on SiO2/Si substrate
  • Method for direct and rapid preparation of single-layer graphene on SiO2/Si substrate

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Embodiment 1

[0027] This embodiment is used to illustrate the present invention in SiO 2 A simple heat treatment method for direct and rapid synthesis of large-area and high-quality single-layer graphene on Si substrates using solid-state carbon sources. Such as figure 1 As shown, the specific steps of the method are as follows:

[0028] 1. On SiO 2 / Si substrate deposited a layer of crystallized copper film

[0029] Surface covered with 300nm SiO 2 layer of silicon as the substrate, using the magnetron sputtering method on SiO 2 A copper film with a thickness of 500nm was deposited on the / Si substrate, and the reference pressure of the sputtering chamber was about 2×10 -6 Torr, the copper deposition rate is controlled at less than Copper-deposited SiO 2 / Si substrate is placed in a common thermal annealing furnace for thermal annealing to crystallize the copper film; during the entire annealing process, the annealing furnace is fed with protective gas Ar / H 2 (1:1); the annealing ...

Embodiment 2

[0038] This embodiment is used to illustrate the present invention in SiO 2 A facile thermal treatment method for the direct and rapid synthesis of single-layer graphene on Si substrates using solid-state carbon sources.

[0039] According to the method identical with embodiment 1 in SiO 2 / Si substrate directly synthesized graphene, the difference is the use of sucrose (Sucrose,C 12 h 22 o 11 ) is the carbon source. After diluting sucrose with ultrapure water, it was spin-coated on the surface of the copper film, and the spin-coating thickness was about 500 nm. Using Raman spectroscopy (such as Figure 5 The bottommost curve in ) confirms that in SiO 2 / Si substrates obtained high-quality single-layer graphene.

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Abstract

The invention discloses a method for direct and rapid preparation of single-layer graphene on a SiO2 / Si substrate. The method comprises the following main steps: depositing a layer of a crystallized metal catalytic material film on the SiO2 / Si substrate and then uniformly coating the surface of the metal catalytic material film with a solid carbon source; carrying out high-temperature treatment on the previously-obtained sample by using simple rapid heat treatment technology, wherein in the process of rapid high-temperature heat treatment, a part of the carbon source on the surface of the metal catalytic material film is diffused onto the surface of SiO2 through metal grain boundaries and forms single-layer graphene under active catalysis of metal, and the rest part of amorphous carbon is left on the surface of the film; and finally, carrying out simple metal dissolving so as to obtain single-layer graphene with SiO2 / Si as a substrate. With the method provided by the invention, large-area high-quality single-layer graphene can be directly obtained on the SiO2 / Si substrate. The method has simple and rapid preparation process, is compatible with current microelectronic process, does not need transfer of the substrate and is beneficial for device processing and application of graphene.

Description

technical field [0001] The present invention relates to a kind of solid carbon source in SiO 2 A simple thermal treatment method for the direct and rapid synthesis of large-area and high-quality single-layer graphene on Si substrates. Background technique [0002] Due to its excellent transport properties, the quasi-two-dimensional material Graphene has broad application prospects and great application value in many fields such as radio frequency devices, sensors and optoelectronic devices, and has become a hotspot in the research of new materials. In order to realize the popularization and application of graphene, the preparation of large-area and high-quality graphene has become the focus of current research. [0003] At present, the preparation methods of graphene mainly include mechanical exfoliation, chemical vapor deposition (CVD) and graphite oxide reduction. Among them, the chemical vapor deposition method usually decomposes a gaseous carbon source, such as methane...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/04
Inventor 郭艳青黄锐宋捷宋超王祥李洪亮林圳旭张毅
Owner HANSHAN NORMAL UNIV
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