A three-primary-color photodetection method based on radial junction stack structure
A photoelectric detection and layer structure technology, applied in the direction of circuits, electrical components, sustainable manufacturing/processing, etc., can solve the problems of cumbersome junction area production, complex material preparation, and reduced detection performance, and achieve low cost, good sensitivity, and work. The effect of low voltage
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[0032] In order to make the purpose, technical solutions and advantages of the present invention clearer, the following in conjunction with specific examples, and with reference to the appended figure 1 , to further describe the present invention in detail. A, B, and C in the figure are electrodes with a stacked PIN structure.
[0033] 1) A common glass sheet with a thickness of about 1mm is used as the substrate;
[0034] 2) Use the conventional cleaning method on the surface of the substrate, and after cleaning, sputter a layer of about 1 layer of aluminum-doped zinc oxide (AZO) film as the bottom electrode;
[0035] 3) Evaporating a 1-2nm Sn film on the surface of the substrate as a catalyst;
[0036] 4) In PECVD, treat with hydrogen at 320, power 10W, and 30Pa for 5 minutes to form Sn particles with a diameter of about 20-40nm; heat up to 520 and feed silane and borane, and grow at a power of 20W with a diameter of about 40nm and a length of About 1 p-type silicon nanow...
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