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A three-primary-color photodetection method based on radial junction stack structure

A photoelectric detection and layer structure technology, applied in the direction of circuits, electrical components, sustainable manufacturing/processing, etc., can solve the problems of cumbersome junction area production, complex material preparation, and reduced detection performance, and achieve low cost, good sensitivity, and work. The effect of low voltage

Active Publication Date: 2017-04-12
NANJING UNIV
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Problems solved by technology

These two methods either have great disadvantages in terms of device complexity, external circuit modules, and circuit complexity, or the material preparation is more complicated, the junction area is more cumbersome, and the detection performance will decrease with the increase of use time.

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  • A three-primary-color photodetection method based on radial junction stack structure

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Embodiment Construction

[0032] In order to make the purpose, technical solutions and advantages of the present invention clearer, the following in conjunction with specific examples, and with reference to the appended figure 1 , to further describe the present invention in detail. A, B, and C in the figure are electrodes with a stacked PIN structure.

[0033] 1) A common glass sheet with a thickness of about 1mm is used as the substrate;

[0034] 2) Use the conventional cleaning method on the surface of the substrate, and after cleaning, sputter a layer of about 1 layer of aluminum-doped zinc oxide (AZO) film as the bottom electrode;

[0035] 3) Evaporating a 1-2nm Sn film on the surface of the substrate as a catalyst;

[0036] 4) In PECVD, treat with hydrogen at 320, power 10W, and 30Pa for 5 minutes to form Sn particles with a diameter of about 20-40nm; heat up to 520 and feed silane and borane, and grow at a power of 20W with a diameter of about 40nm and a length of About 1 p-type silicon nanow...

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Abstract

The invention discloses a three-primary-color photoelectric detection method based on a radial junction lamination structure, and the method comprises the steps: growing a plurality of amorphous silicon layers of different doping types on the surface of a vertical silicon nanowire in a covering manner, and forming a two-layer PIN structure from the inside to the outside; depositing an ITO transparent conductive film between the two layers of the structure, so as to detect a photoelectric detection response current of the inner and outer layers; enabling the intrinsic amorphous silicon of the outer layer of the PIN structure to serve as an absorption layer for stronger response to incident light at a short wave band (slightly blue) based on a cavity mode coupling characteristics of an obtained junction structure; enabling the intrinsic amorphous silicon of the inner layer of the PIN structure to respond to light at a long band more strongly; enabling the light response band to be the intersection part of the inner and outer layers of the PIN structure when the inner and outer layers of the PIN structure are connected in series, and achieving the independent detection of three primary colors within an visible optical band, wherein the detection technology employs the response difference of the two-layer p-i-p structure to different wave bands. The structure shows great advantages in the photoelectric detection of retina three primary colors: material reduction, process shortening, voltage reduction, sensitivity improvement, and good work stability.

Description

[0001] 1. Technical field [0002] The present invention relates to a retinal photodetection technology for distinguishing different colors in the visible light band, in particular about utilizing the cavity mode coupling characteristics of the radial junction stack structure, using only one semiconductor material (a-Si:H ) can realize the detection of at least three colors of visible light. [0003] 2. Technical background [0004] With the rapid development of electronic technology, people have higher and higher requirements for image acquisition and image processing. Color distinction plays a vital role in image acquisition, and the modern electronic society puts forward strict requirements for color inspection and color quality control. Therefore, color sensing technology is one of the core technologies of modern color measuring instruments. It can not only replace the human eye in the industrial field to make an objective evaluation of product color differences to achieve...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/105H01L31/20H01L31/0352
CPCH01L31/035281H01L31/1055H01L31/202Y02P70/50
Inventor 余林蔚钱晟一于忠卫陆嘉文朱光耀
Owner NANJING UNIV
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