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An adjustable vertical magnetoresistive element

A technology of magnetoresistance and components, applied in the field of vertical magnetoresistance components, can solve the problems such as the inability to obtain the thermal stability of demagnetization effect

Active Publication Date: 2017-12-15
SHANGHAI CIYU INFORMATION TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the material used for the memory layer in an in-plane MTJ can have low damping and high MR, but when this material is used in a vertical MTJ, it cannot be thermally stable enough to counteract the demagnetization effect because there is not enough magnetocrystalline anisotropy sex

Method used

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  • An adjustable vertical magnetoresistive element
  • An adjustable vertical magnetoresistive element
  • An adjustable vertical magnetoresistive element

Examples

Experimental program
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Embodiment 1

[0035] figure 1 It is a structural diagram of an MTJ element based on the present invention, which includes a top electrode 11, a reference layer 12, a barrier layer 13, a memory layer 14, a functional layer 16 and a bottom electrode 17 arranged adjacently from top to bottom, wherein the memory Layer 14 is composed of sequentially adjacent first memory sublayer 14a, intermediate memory layer 14b and second memory sublayer 14d.

[0036] The reference layer 12 and the memory layer 14 are ferromagnetic materials, the magnetization direction of the reference layer 12 is constant and the magnetic anisotropy is perpendicular to the layer surface, and the magnetization direction of the memory layer 14 is variable and the magnetic anisotropy is perpendicular to the layer surface. The magnetic perpendicular anisotropy energy of the reference layer 12 is sufficiently greater than the magnetic perpendicular anisotropy energy of the memory layer 14, which can be realized by adjusting the ...

Embodiment 2

[0044] figure 2 It is a structural schematic diagram of another MTJ element based on the present invention, which includes a top electrode 11, a reference layer 12, a barrier layer 13, a memory layer 14, a functional layer 16 and a bottom electrode 17 arranged adjacently in order from top to bottom, wherein The memory layer 14 is composed of a first memory sublayer 14a and a second memory sublayer 14d which are sequentially adjacent.

[0045] Compared with Embodiment 1, the difference of this embodiment lies only in the setting of the memory layer 14 . Wherein, the memory layer 14 has a double-layer structure, and the first memory sub-layer 14a is made of semi-metallic Heusler alloy, preferably Co2MnSi, Co2FeAl, Co2FeSi or Co2MnAl. In this embodiment, the material of the first memory sublayer 14a is a semimetal Heusler alloy Co2FeAl (thickness is about 2.5nm); the material of the second memory sublayer 14d is CoFeB (thickness is about 1.2nm), wherein the B content is 20%.

Embodiment 3

[0047] image 3 is in figure 1 A schematic diagram of the structure of an MTJ element further improved on the basis of the device structure in the middle, including a top electrode 11, a reference layer 12, a barrier layer 13, a memory layer 14, a functional layer 16 and a bottom electrode 17 arranged adjacently in sequence from top to bottom , wherein the memory layer 14 is composed of sequentially adjacent first memory sublayer 14a, middle memory layer 14b, insertion layer 14c and second memory sublayer 14d. and figure 1 The difference in device structure is that an insertion layer 14c is added between the middle memory layer 14b and the second memory sublayer 14d.

[0048] The material of the insertion layer 14c is preferably Ta, W, Ti, Cr, Zr, Nb, Hf, V, Mo, Pt, Pd, Au, Ag or Al, and Ta (with a thickness of about 0.3 nm) is used in this embodiment. When heat treatment is performed on the MTJ, the B atoms in the optimization layer 14 will also diffuse into the insertion ...

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Abstract

The invention provides an adjustable vertical magnetoresistive element, which comprises sequentially adjacent reference layers, barrier layers, memory layers, functional layers and electrode layers; the magnetization direction of the reference layer is constant and the magnetic anisotropy perpendicular to the layer surface; the barrier layer is located between the reference layer and the memory layer and adjacent to the reference layer and the memory layer respectively; the magnetization direction of the memory layer is variable and magnetically anisotropic The anisotropy is perpendicular to the layer surface, and the memory layer includes at least a first memory sublayer and a second memory sublayer, the first memory sublayer is a ferromagnetic material layer and is adjacent to the barrier layer, and the second memory sublayer is The memory sub-layer is an amorphous ferromagnetic material layer and is adjacent to the functional layer; the functional layer is adjacent to the memory layer, and it is a material layer with a NaCl lattice structure, and the (100 ) crystal plane parallel to the substrate plane, the lattice constant of the [110] crystal orientation is slightly larger than the lattice constant of the bcc phase Co in the [100] crystal orientation.

Description

technical field [0001] The invention relates to the field of storage devices, in particular to a vertical magnetoresistance element. Background technique [0002] With the continuous progress of material science, a new type of memory—Magnetic Random Access Memory (MRAM, Magnetic Random Access Memory) is attracting people's attention. It has the high-speed read and write capabilities of static random access memory (SRAM), and the high integration of dynamic random access memory (DRAM), and can basically be repeatedly written indefinitely. This high-speed memory has been regarded as the successor of DRAM memory. [0003] Magnetic Tunneling Junction (MTJ, Magnetic Tunneling Junction) is a magnetic multilayer film composed of insulators or magnetic materials. Under the action of voltage across the insulating layer, its tunnel current and tunnel resistance depend on the magnetization of the two ferromagnetic layers. Relative orientation, when the relative orientation changes un...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/08H01L43/10H10N50/10
Inventor 郭一民陈峻肖荣福
Owner SHANGHAI CIYU INFORMATION TECH CO LTD
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