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Preparation method of in-plane anisotropy Bi-substituted garnet magneto-optic single crystal thin film

An anisotropic, single-crystal thin film technology, applied in the field of materials, can solve the problems of high conversion efficiency, large bandwidth, and impossibility, and achieve the effect of improving film quality, high stability, and good temperature stability

Inactive Publication Date: 2015-08-05
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
  • Description
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Problems solved by technology

The films produced by the magnetron sputtering process have obvious Faraday effect and can be applied to various magneto-optical devices, but as far as magneto-optic modulators are concerned, they cannot achieve high conversion efficiency and large bandwidth

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  • Preparation method of in-plane anisotropy Bi-substituted garnet magneto-optic single crystal thin film
  • Preparation method of in-plane anisotropy Bi-substituted garnet magneto-optic single crystal thin film
  • Preparation method of in-plane anisotropy Bi-substituted garnet magneto-optic single crystal thin film

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preparation example Construction

[0022] A preparation method of an in-plane anisotropic Bi-generation garnet magneto-optical single crystal film, comprising the following steps:

[0023] Step 1. Formula, ingredients:

[0024] Formula is Bi x Lu 3-x IG, according to the best matching relationship, take x as 0.9; this implementation example uses lead-free epitaxy, with Lu2O3, Bi2O3, Fe2O3 as raw materials, that is, melt, Bi2O3 as flux, CaO as additive, R0=1, R1= 0.1294, R2=0.1751, R3=0.01; the ratio of each component is determined according to the ratio, the amount of each raw material is determined according to the weight specific gravity and the total quality, the specific gravity of Bi2O3, Lu2O3, Fe2O3, CaO is 92.195%, 1.898%, 5.886 %, 0.021%, the total amount is 6000g; because the volume of the powder is larger than the volume of the melt and the size of the crucible is fixed, the material should be added to the crucible several times, and the method of adding material, melting, cooling, and refilling is ...

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Abstract

The invention aims to provide a preparation method of an in-plane anisotropy Bi-substituted garnet magneto-optic single crystal thin film. The method is used for application of a TE-TM (Transverse Electric-Transverse Magnetic) light mode conversion modulator. A liquid-phase epitaxial process is adopted to realize growth of Bi ion and Lu ion codoped single crystal garnet (BiLuIG) on a gadolinium gallium garnet substrate (orientation of being <111>), a melt reaches the growth temperature of the thin film through a mixing, temperature rising-thermal insulation-triple cooling method, and the growth process of the thin film is controlled to finally prepare the in-plane anisotropy Bi-substituted garnet magneto-optic single crystal thin film. For the growth of the thin film, the three-step cooling mode can achieve good temperature stability and melt state stability. The in-plane anisotropy Bi-substituted garnet magneto-optic single crystal thin film is prepared, the preparation process is simple, and the stability is high.

Description

technical field [0001] The invention belongs to the technical field of materials, and relates to a preparation method of a Bi-generation garnet magneto-optical single crystal film material with in-plane anisotropy. Background technique [0002] In recent years, with the development of technology, the manufacturing process of materials has been continuously improved. Compared with the existing magnetron sputtering process, PLD process and sol-gel method, the traditional liquid phase epitaxy process (LPE) is more effective in the preparation of single crystal thin films. has an irreplaceable role. As far as magneto-optical materials are concerned, the application of Bi-generation garnet magneto-optic single crystal thin film materials in integrated magneto-optic devices, such as magneto-optical isolators, magneto-optical switches and magneto-optic modulators, is increasing. The films produced by the magnetron sputtering process have obvious Faraday effect and can be applied t...

Claims

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Application Information

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IPC IPC(8): C30B11/00C30B29/28C30B29/64
Inventor 杨青慧田晓洁张怀武饶毅恒文岐业贾利军范仁钰
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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