Thin film arranged on substrate and preparation method of thin film

Abstract

The invention discloses a thin film arranged on a substrate and a preparation method of the thin film. The thin film comprises a substrate layer and a thin film layer, wherein the thickness of the thin film layer ranges from 10*103 nanometers to 30*103 nanometers, and the thermal expansion coefficients of the base layer material and the thin film layer material are different. The preparation method includes the steps of preparing the thin film layer on the substrate of the same material, wherein a sacrificial layer is arranged between the thin film layer and the substrate of the same material; bonding the thin film layer on the target substrate, removing the sacrificial layer, and obtaining the thin film layer on the target substrate. When the expansion coefficient difference of the substrate material and the thin film material is large, the thin film layer which is uniform in film thickness and low in defect density is formed, and the thickness of the thin film reaches the nanometer grade; by means of the thin film prepared on different materials, compatibility of production processes and production lines of various materials can be achieved, semiconductor devices and thin film devices of the substrate material can be integrated, the machinable property of the thin film material is improved, and novel devices excellent in performance are produced.

Description

technical field [0001] The invention relates to the technical field of semiconductor materials and photoelectric materials, in particular to a thin film arranged on a substrate and a preparation method thereof. Background technique [0002] Lithium niobate or lithium tantalate materials are widely used in the field of optoelectronic integration due to their excellent electro-optic, acousto-optic, piezoelectric, photorefractive and good mechanical properties, such as waveguide modulators in the field of optical fiber communications, It has the advantages of small size, high performance, and low power consumption, and can also be used in the field of information storage to achieve high-density information storage. However, lithium niobate or lithium tantalate materials can only exert their performance when they are well fused with the base material. If a lithium niobate film is formed on a silicon-based film, it can be compatible with the existing production process and produ...

AI Technical Summary

Problems solved by technology

However, this method is only effective when the thermal expansion coefficients of the target substrate and the original substrate are not significantly different. When the thermal expansion coefficients of the target substrate and the original substrate are greatly different, it is difficult to prepare a thin film by heating, and the heating temperature is low, and the implanted ions are difficult. Absorb enough energy to grow into bubbles, making it difficult to separate the film layer and the rest layer; the heating temperature is high, because the expansion and elongation of the target substrate and the original substrate are very different at high temperatures, when the expansion difference of the two materials When the value exceeds the tolerance limit of one of the materials, the bonding body will be cracked and broken, and it is difficult to obtain a large-area completely separated film