Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparing self-supporting diamond film

A diamond film, self-supporting technology, applied in the direction of metal material coating process, coating, gaseous chemical plating, etc., can solve the problems of pollution, Si non-reusable environment, prone to cracks, etc., to reduce costs and prevent long-term The effect of distance diffusion and pollution avoidance

Active Publication Date: 2015-04-29
山西新碳超硬材料科技有限公司
View PDF4 Cites 19 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The present invention aims at the disadvantages that cracks are prone to occur when using molybdenum as a substrate to prepare a self-supporting diamond film by CVD method, but when Si is used as a substrate, it cannot be reused and is likely to cause environmental pollution, and provides a method for preparing a self-supporting diamond film. Membrane method

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing self-supporting diamond film
  • Method for preparing self-supporting diamond film
  • Method for preparing self-supporting diamond film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028] The present invention will be further described below in conjunction with accompanying drawing:

[0029] Such as Figure 1 to Figure 5 Shown, a kind of preparation method of self-supporting diamond film comprises the following steps:

[0030] 1) Titanium coating preparation: take a silicon substrate 1 with a thickness of 3-5 mm, ultrasonically clean it with deionized water and acetone, and dry it with hot air. Prepare a layer of titanium metal coating 2 with a thickness of 10-20 μm on the upper surface and side surface of the silicon substrate 1;

[0031] 2) Preparation of molybdenum coating: using a double-glow plasma metallization method to prepare a layer of molybdenum metal coating 3 with a thickness of 2-4 μm on the titanium metal coating 2 on the upper surface of the silicon substrate 1;

[0032] 3) Preparation of diamond film: use diamond powder with a particle size of 3-10 μm to grind the surface of the molybdenum metal coating 3 on the upper surface of the si...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for preparing a self-supporting diamond film and belongs to the technical field of chemical vapor deposition diamond films. The method disclosed by the invention comprises the following steps: pre-depositing a titanium metal coating on the upper surface and side surface of a silicon substrate; depositing a molybdenum metal coating on the upper surface of the silicon substrate containing the titanium metal coating; depositing a diamond film on the upper surface of the silicon substrate which is pre-deposited with the titanium / molybdenum metal coating by adopting a chemical vapor deposition method; and finally, obtaining the self-supporting diamond film by using an oxalic acid solution corroding sample, and recycling the silicon substrate. Compared with the prior art, the method disclosed by the invention has the advantages that the diamond film is fast in nucleation, and the deposition time can be shortened; the silicon substrate can be repeatedly used, and the production cost can be reduced; and the environmental pollution caused by conventional acid corrosion of the silicon substrate can be avoided.

Description

technical field [0001] The invention belongs to the technical field of chemical vapor deposition diamond film, in particular to a preparation method of self-supporting diamond film. Background technique [0002] Chemical vapor deposition (CVD) self-supporting diamond films have excellent physical and chemical properties, so they are widely used in mechanical processing, heat sinking, and optics, and have broad application prospects in many other high-tech fields. [0003] At present, there are two main methods for industrial production of self-supporting diamond films: [0004] The first method is: use a molybdenum wafer with a certain thickness (generally > 5mm) as the substrate material, and use the hot wire CVD method, DC jet plasma CVD method, hot cathode plasma CVD method, microwave plasma CVD method, etc. Deposition of diamond films. When the diamond film reaches the desired thickness, the deposition ends. During the cooling process, there is a large difference in...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23C16/27C23C30/00C23F1/44
CPCC23C16/27C23F1/44
Inventor 于盛旺高洁刘小萍钟强黑鸿君申艳艳贺志勇
Owner 山西新碳超硬材料科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products