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Planar structure perovskite photovoltaic cell with CrOx thin film prepared by solution method as anode interface layer and preparation method of planar structure perovskite photovoltaic cell

A planar structure and photovoltaic cell technology, applied in photovoltaic power generation, circuits, electrical components, etc., can solve the problems of complex preparation process of magnetron vacuum system, increase of battery preparation cost, unfavorable battery stability, etc., and achieve good optoelectronic performance, Reduced manufacturing cost and less interface defects

Inactive Publication Date: 2015-04-01
WUHAN INSTITUTE OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, CrO prepared by magnetron sputtering x Has been applied to the anode interface layer of organic solar cells, CrO prepared by magnetron sputtering x The film is a complex of multivalent states. Due to the different compositions of chromium in different valence states in the film, its photoelectricity is different, and there are many defects (especially surface defects). It is used for the anode interface of the battery layer, it will reduce the effective contact with the photosensitive layer of the battery and increase the interface resistance; at the same time, these defects will adsorb water and oxygen, which is detrimental to the stability of the battery; in addition, the preparation process of the magnetron vacuum system is complicated, which greatly increases the battery life. The preparation cost of

Method used

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  • Planar structure perovskite photovoltaic cell with CrOx thin film prepared by solution method as anode interface layer and preparation method of planar structure perovskite photovoltaic cell
  • Planar structure perovskite photovoltaic cell with CrOx thin film prepared by solution method as anode interface layer and preparation method of planar structure perovskite photovoltaic cell

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Embodiment 1

[0029] Such as figure 1 As shown, a planar structure perovskite photovoltaic cell includes a transparent conductive substrate, an anode interface layer, a perovskite photosensitive active layer, a cathode interface layer and a metal electrode, and its preparation method includes the following steps:

[0030] (1) Treatment of transparent conductive substrate: cleaning FTO (fluorine-doped SnO 2 ) conductive glass, first soak the conductive glass in a solution containing detergent (such as Liby brand liquid detergent) for 10 minutes, then repeatedly scrub and rinse with water; then polish with polishing powder; then Put them into containers containing deionized water, acetone and alcohol and sonicate them for 20 minutes; finally put them in deionized water and rinse them twice, then blow them dry with a nitrogen gun and dry them in an oven at 80°C;

[0031] (2) Prepare CrOx thin film on FTO substrate: get 0.5 milligram purity and be that 99.9% chromium acetylacetonate powder is ...

Embodiment 2

[0039] Such as figure 1 As shown, a planar structure perovskite photovoltaic cell includes a transparent conductive substrate, an anode interface layer, a perovskite photosensitive active layer, a cathode interface layer and a metal electrode, and its preparation method includes the following steps:

[0040] (1) cleaning ITO conductive glass sheet: with embodiment 1;

[0041] (2) Preparation of CrO on ITO substrate x Film: take 12 mg of chromium acetylacetonate powder with a purity of 99.9 wt% and dissolve it in 1 milliliter of chlorobenzene, spin a layer of chromium acetylacetonate film on the substrate at a speed of 2000 rpm by spin coating, and place it In the atmospheric atmosphere, anneal at a temperature of 60°C for 10 minutes, then anneal the annealed chromium acetylacetonate film at a temperature of 150°C for 30 minutes in the atmosphere;

[0042] (3) Preparation of perovskite photosensitive active layer:

[0043] a.CH 3 NH 3 The preparation of I solution: with em...

Embodiment 3

[0050] Such as figure 1 As shown, a planar structure perovskite photovoltaic cell includes a transparent conductive substrate, an anode interface layer, a perovskite photosensitive active layer, a cathode interface layer and a metal electrode, and its preparation method includes the following steps:

[0051] (1) cleaning of the flexible transparent plastic substrate coated with ITO: with embodiment 1;

[0052] (2) Preparation of CrO on a flexible transparent plastic substrate of ITO x Film: Dissolve 4 mg of chromium acetylacetonate powder with a purity of 99.9 wt% in 1 ml of chlorobenzene, spin a layer of chromium acetylacetonate film on the substrate at a speed of 2000 rpm by spin coating, and place it In the atmospheric atmosphere, anneal at a temperature of 60°C for 10 minutes, then take out the annealed chromium acetylacetonate film, put it into a UV-ozone cleaner, and treat it with UV-ozone for 0.5 hours in an atmospheric atmosphere and room temperature;

[0053] (3) Pr...

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Abstract

The invention belongs to the fields of thin film material and device, and in particular relates to a perovskite photovoltaic cell and a preparation method of the planar structure perovskite photovoltaic cell. The perovskite photovoltaic cell comprises a transparent conductive substrate, a CrOx thin film anode interface layer, a perovskite photosensitive active layer, a cathode interface layer and a metal electrode, wherein the CrOx thin film is prepared by the solution method comprising following steps: with chromium acetylacetonate as solute and chlorobenzene as solvent, preparing a chromium acetylacetonate solution, preparing a chromium acetylacetonate thin film on a substrate by a spin-coating method and annealing at low temperature; enabling the low-temperature annealed chromium acetylacetonate thin film to be subjected to high-temperature thermal annealing treatment or ultraviolet ozone treatment to obtain the CrOx thin film after the chromium acetylacetonate thin film is oxidized. The CrOx thin film disclosed in the invention is prepared by the solution method, and has small interface defect and good thermal stability, and the perovskite photovoltaic cell with the thin film has excellent photoelectric property; the preparation method is simple, and the preparation cost of the cell can be reduced greatly.

Description

technical field [0001] The invention belongs to the field of thin film materials and devices, in particular to a CrO prepared by a solution method x The invention discloses a planar perovskite photovoltaic cell with a thin film as an anode interface layer and a preparation method thereof. Background technique [0002] When the energy issue has increasingly become a bottleneck restricting the development of the international society and economy, more and more countries have begun to implement the "Sunshine Plan" to develop solar energy resources and seek new impetus for economic development. Solar cells are one solution to this problem. In recent years, photovoltaic cells with metal halide perovskite structures have sprung up. In 2014, its efficiency exceeded 19.0%. This type of battery has a large carrier mobility, a strong ability to absorb light, and a large open circuit voltage. It has a wide range of raw material sources, low-temperature solution preparation, and good ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/44H01L51/46H01L51/48
CPCH10K30/80H10K30/00Y02E10/549
Inventor 秦平力秦中立许荣荣余雪里李端勇张昱钟源
Owner WUHAN INSTITUTE OF TECHNOLOGY
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