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Multiferroic Bi(0.98-x)Sr0.02RExFe0.97Mn0.03O3-CuFe2O4 composite film and preparation method thereof

A technology of bi0.98-xsr0.02rexfe0.97mn0.03o3-cufe2o4, cufe2o4, applied in the field of functional materials, can solve the problem of limited practical application, the decrease of remanent polarization, the weak ferromagnetic nature of the hysteresis loop that cannot obtain saturation, etc. problem, to achieve the effect of increased structural distortion, reduced content, excellent ferroelectricity and ferromagnetism

Active Publication Date: 2015-04-01
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

And under the action of the electric field, the directional movement of oxygen vacancies also forms a leakage current, causing a decrease in the remanent polarization.
BiFeO 3 The large leakage current in the material makes it impossible to obtain a saturated hysteresis loop and its weak ferromagnetic nature, which limits the practical application of the material

Method used

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  • Multiferroic Bi(0.98-x)Sr0.02RExFe0.97Mn0.03O3-CuFe2O4 composite film and preparation method thereof
  • Multiferroic Bi(0.98-x)Sr0.02RExFe0.97Mn0.03O3-CuFe2O4 composite film and preparation method thereof
  • Multiferroic Bi(0.98-x)Sr0.02RExFe0.97Mn0.03O3-CuFe2O4 composite film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] Step 1, dissolve ferric nitrate and copper nitrate in ethylene glycol methyl ether at a molar ratio of 1:2, stir for 30 minutes, and then add acetic anhydride to obtain a stable CuFe with a Cu ion concentration of 0.15mol / L. 2 o 4 Precursor, CuFe 2 o 4 The volume ratio of ethylene glycol methyl ether and acetic anhydride in the precursor solution is 3:1;

[0036] Step 2, dissolving bismuth nitrate, strontium nitrate, ferric nitrate and manganese nitrate in the solvent (x=0, excessive 5% of bismuth nitrate) in a molar ratio of 1.03:0.02:0.97:0.03 to obtain a total concentration of metal ions of 0.25 mol / L Stable Bi 0.98 Sr 0.02 Fe 0.97 mn 0.03 o 3 Precursor solution; The solvent is a mixed solution of ethylene glycol methyl ether and acetic anhydride with a volume ratio of 3:1;

[0037] Step 3, choose the FTO / glass substrate as the substrate, place the cut FTO / glass substrate in detergent, acetone, and ethanol in sequence for ultrasonic cleaning, rinse the substr...

Embodiment 2

[0042] Step 1, dissolve ferric nitrate and copper nitrate in ethylene glycol methyl ether at a molar ratio of 1:2, stir for 30 minutes, and then add acetic anhydride to obtain a stable CuFe with a Cu ion concentration of 0.25mol / L. 2 o 4 Precursor, CuFe 2 o 4 The volume ratio of ethylene glycol methyl ether and acetic anhydride in the precursor solution is 2.5:1;

[0043] Step 2, dissolving bismuth nitrate, strontium nitrate, cerium nitrate, ferric nitrate and manganese nitrate in a solvent with a molar ratio of 1:0.02:0.03:0.97:0.03 (RE=Ce, x=0.03, bismuth nitrate excess 5%) , to obtain a stable Bi with a total concentration of metal ions of 0.35 mol / L 0.95 Sr 0.02 Ce 0.03 Fe 0.97 mn 0.03 o 3 Precursor solution; The solvent is a mixed solution of ethylene glycol methyl ether and acetic anhydride with a volume ratio of 2.5:1;

[0044] Step 3, choose the FTO / glass substrate as the substrate, place the cut FTO / glass substrate in detergent, acetone, and ethanol in sequen...

Embodiment 3

[0049] Step 1, dissolve iron nitrate and copper nitrate in ethylene glycol methyl ether at a molar ratio of 1:2, stir for 30 minutes, and then add acetic anhydride to obtain a stable CuFe with a Cu ion concentration of 0.22mol / L. 2 o 4 Precursor, CuFe 2 o 4 The volume ratio of ethylene glycol methyl ether and acetic anhydride in the precursor solution is 3.5:1;

[0050] Step 2, dissolving bismuth nitrate, strontium nitrate, neodymium nitrate, ferric nitrate and manganese nitrate in a solvent with a molar ratio of 0.98:0.02:0.05:0.97:0.03 (RE=Nd, x=0.05, bismuth nitrate excess 5%) , to obtain a stable Bi with a total concentration of metal ions of 0.28 mol / L 0.93 Sr 0.02 Nd 0.05 Fe 0.97 mn 0.03 o 3 Precursor solution; The solvent is a mixed solution of ethylene glycol methyl ether and acetic anhydride with a volume ratio of 3.5:1;

[0051] Step 3, choose the FTO / glass substrate as the substrate, place the cut FTO / glass substrate in detergent, acetone, and ethanol in se...

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Abstract

The invention discloses a multiferroic Bi(0.98-x)Sr0.02RExFe0.97Mn0.03O3-CuFe2O4 composite film and a preparation method thereof. The composite film comprises Bi(0.98-x)Sr0.02RExFe0.97Mn0.03O3 crystal films and CuFe2O4 crystal films which are composited together. The preparation method comprises the following steps: firstly, preparing a Bi(0.98-x)Sr0.02RExFe0.97Mn0.03O3 precursor solution and a CuFe2O4 precursor solution respectively; secondly, preparing multiple layers of CuFe2O4 films on a substrate by spin coating, and preparing multiple layers of Bi(0.98-x)Sr0.02RExFe0.97Mn0.03O3 films on the CuFe2O4 films by spin coating to obtain a target product. The equipment requirement is simple, the uniformity of the prepared film is high, the doping amount is easy to control, the ferroelectric and ferromagnetic properties of the film are improved, and the leakage current density of the film is effectively reduced.

Description

technical field [0001] The invention belongs to the field of functional materials and relates to multiferroic Bi 0.98-x Sr 0.02 RE x Fe 0.97 mn 0.03 o 3 -CuFe 2 o 4 Composite membrane and method for its preparation. Background technique [0002] BiFeO 3 It is a typical single-phase multiferroic perovskite material with ferroelectricity at room temperature (T C ~1103k) and ferromagnetic (T N ~640k). Due to BiFeO 3 Materials have magnetoelectric coupling effects. In recent years, a worldwide research boom of single-phase magnetoelectric materials has been formed. With the development of microelectronics, optoelectronics and sensors, the requirements for material properties are getting higher and higher. Ferroelectric thin films have become widely used due to their good properties such as ferroelectricity, piezoelectricity, dielectricity and pyroelectricity. Important functional materials in the fields of microelectronics, optoelectronics, integrated optics and mic...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03C17/34
CPCC03C17/3405C03C2217/70C03C2218/116
Inventor 谈国强晏霞任慧君夏傲
Owner SHAANXI UNIV OF SCI & TECH
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