A method for controllable growth of carbon nanotube bundles in the horizontal direction of the substrate

A carbon nanotube bundle, horizontal direction technology, applied in nanotechnology, nanotechnology, nanostructure manufacturing and other directions, can solve the problems of complex template processing, inability to meet nanoelectronic devices, destroying carbon nanotube structures, etc. Versatile, easy-to-integrate effects

Inactive Publication Date: 2016-04-13
WUHAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this method mainly has the following defects: First, the controllability of the through-hole template preparation in the horizontal direction is poor. Although the through-hole density on the template can be controlled at present, the aperture size and the arrangement of the through-holes cannot be precisely controlled; the second is It is very difficult to prepare through-hole templates in the horizontal direction and the post-template processing is more complicated
Although these post-synthesis alignment methods can remove impurities such as catalysts in advance, the alignment conditions are mild, and it is easy to produce large-scale, highly oriented carbon nanotube bundles, but the structure of carbon nanotubes and the introduction of carbon nanotube bundles are bound to be destroyed when dispersed. impurities, and these methods cannot precisely control the position and size of carbon nanotube bundles
[0004] To sum up, the existing technology cannot realize carbon nanotube bundles with precise and controllable size and position in the horizontal direction of the substrate, which cannot meet the needs of most nanoelectronic devices.

Method used

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  • A method for controllable growth of carbon nanotube bundles in the horizontal direction of the substrate
  • A method for controllable growth of carbon nanotube bundles in the horizontal direction of the substrate

Examples

Experimental program
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Effect test

Embodiment 1

[0045] (1) Prepare the first silicon wafer 1, clean it with conventional semiconductor cleaning process, dry it, and use photolithography process and ion reaction etching process to process a 10 micron long and wide carbon nanotube bundle on the surface of the silicon wafer. 2 microns, horizontal micro-nano channel 2 with a depth of 2 microns;

[0046] (2) Spin-coat a layer of AZ4620 photoresist on the surface of the first silicon wafer 1 with a thickness of 3 microns by using a coating machine, expose and develop the catalytic film deposition window, and use the electron beam evaporation process on the surface of the first silicon wafer Sequentially deposit a 6-nm-thick Al2O3 layer and a 1-nm-thick Co layer to form the catalytic film 3, remove the photoresist, and remove the catalytic film on the photoresist along with it, leaving the micro-nano channel 2 after patterning The catalytic membrane 3, the size of the catalytic membrane is 2 microns in width and 2.2 microns in len...

Embodiment 2

[0052] (1) Prepare the quartz sheet 1, clean it with conventional semiconductor cleaning process, dry it, use photolithography process and ion reaction etching process to process 10 microns in length and 2 microns in width at the position where carbon nanotube bundles need to be grown on the surface of the quartz plate, Horizontal micro-nano channel 2 with a depth of 2 microns;

[0053] (2) Spin-coat a layer of AZ4620 photoresist on the surface of the quartz plate 1 with a homogenizer, with a thickness of 3 microns, expose and develop the catalytic film deposition window, and deposit 10 nanometers of photoresist on the surface of the quartz plate sequentially using an electron beam evaporation process. The Al2O3 layer and the 2 nanometer thick Fe layer form the catalytic film 3, remove the photoresist, and the catalytic film on the photoresist is removed together thereupon, leaving the patterned catalytic film 3 in the micro-nano channel 2, catalyzed The film size is 2 microns...

Embodiment 3

[0059] (1) Prepare a piece of aluminum oxide sheet 1, clean it with conventional semiconductor cleaning technology, dry it, use photolithography technology and ion reaction etching technology to process a 10 micron long and wide carbon nanotube bundle on the surface of the aluminum oxide sheet 2 microns, horizontal micro-nano channel 2 with a depth of 2 microns;

[0060] (2) Spin-coat a layer of AZ4620 photoresist on the surface of alumina sheet 1 with a coater, with a thickness of 3 microns, expose the catalytic film deposition window by exposure and development, and deposit 12 nanometers on the surface of alumina sheet sequentially using electron beam evaporation process A thick Al2O3 layer and a 3nm-thick Ni layer form the catalytic film 3, the photoresist is removed, and the catalytic film on the photoresist is removed together, leaving the patterned catalytic film 3 in the micro-nano channel 2 , the size of the catalytic membrane is 2 microns wide and 2.5 microns long;

...

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Abstract

The invention discloses a method for controlling the growth of a carbon nanotube bundle in the horizontal direction of a substrate, and belongs to the technical field of nanomaterial preparation. The method comprising the following steps: (1) processing a micro-nano channel on the surface of a first substrate in the horizontal direction; (2) depositing a catalyst film at one end at the bottom of the micro-nano channel and then patterning the catalyst film; (3) covering a second substrate on the micro-nano channel through the bonding technology; (4) etching an air hole communicated with the micro-nano channel on the second substrate to form a semi-closed micro-nano channel; (5) growing a carbon nanotube bundle in the semi-closed micro-nano channel; (6) removing the second substrate, the carbon nano tube in the air hole and the substrate around the carbon nanotube bundle to obtain a carbon nanotube bundle with the same size as the micro-nano channel in the horizontal direction of the substrate. The method provided by the invention has the advantages that a carbon nanotube bundle with precisely controlled orientation, size and location can be obtained in the horizontal direction of the substrate; the process is simple and easy to implement, and can be extensively used.

Description

technical field [0001] The invention relates to a method for controllably growing carbon nanotube bundles in the horizontal direction of a substrate, and belongs to the technical field of nanomaterial preparation. Background technique [0002] Carbon nanotubes are seamless, hollow tubes formed by curling graphene sheets formed by carbon atoms, with a diameter of several nanometers to tens of nanometers and a length of more than tens of microns. As a unique one-dimensional nanomaterial, carbon nanotubes have excellent mechanical properties, outstanding electrical properties and stable chemical properties. Materials, hydrogen storage materials and many other fields have shown broad application prospects. In the above-mentioned many application fields, especially in the field of nanoelectronic devices, it is an important prerequisite to realize the practical application of carbon nanotubes to grow carbon nanotube bundles with an ordered array structure in the horizontal direct...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81C1/00B82B3/00B82Y40/00
Inventor 刘锋叶双莉刘胜王国平蔡华飞
Owner WUHAN UNIV
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