Preparation method of polysilicon thin film material

A technology of polycrystalline silicon thin film and amorphous silicon thin film, which is applied in the manufacture of semiconductor/solid-state devices, electrical components, circuits, etc., can solve the problems of lowering the crystallization temperature of the film, shortening the time required for crystallization, and large laser energy, and saving energy Energy, laser threshold energy reduction, effect of low process temperature

Inactive Publication Date: 2015-03-04
CHINA UNIV OF GEOSCIENCES (BEIJING)
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  • Abstract
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Problems solved by technology

The problem is that the required metal layer is often thick. For example, many studies have shown that the effect of metal-induced crystallization can only be achieved when the ratio of the thickness of the amorphous silicon film to the metal aluminum film is greater than 2:1. Therefore, the problem of metal contamination is the main problem. a technical bottleneck
The problem with this technique is that the laser energy required is very high
This method introduces crystalline components into the precursor silicon-based film, and does not require nucleation during solid-phase crystallization, which effectively reduces the crystallization temperature of the film and shortens the time required for crystallization, but dangerous gases are still required during the preparation process. Silane

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  • Preparation method of polysilicon thin film material
  • Preparation method of polysilicon thin film material
  • Preparation method of polysilicon thin film material

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Experimental program
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Effect test

Embodiment 1

[0039] Such asfigure 1 As shown, a layer of amorphous silicon thin film 2 is deposited on a glass substrate 1 using an intrinsic silicon target with a purity of 99.999% by magnetron sputtering technology. The specific process conditions are: the deposition pressure is 1Pa, the glow power is 80W, The flow rate of argon gas is 26 sccm, the substrate temperature is 150° C., and the deposition time is 30 minutes to obtain an amorphous silicon film 2 with a thickness of 360 nm;

[0040] After the deposition of the amorphous silicon film 2 is completed, a metal aluminum film 3 is sputtered and deposited on the amorphous silicon film 2 in the same vacuum chamber using an aluminum target with a purity of 99.999%. The process conditions are as follows: the deposition pressure is 1 Pa, The optical power is 60W, the flow rate of argon gas is 26sccm, the substrate temperature is 100°C, and the coating time is 2min, and a metal aluminum film 3 with a thickness of 22nm is obtained;

[0041]...

Embodiment 2

[0047] Such as figure 1 As shown, a layer of amorphous silicon thin film 2 is deposited on a glass substrate 1 using an intrinsic silicon target with a purity of 99.9999% by magnetron sputtering technology. The specific process conditions are: the deposition pressure is 0.8Pa, and the glow power is 80W. , the flow rate of argon gas is 20 sccm, the substrate temperature is 150° C., and the deposition time is 25 minutes to obtain an amorphous silicon film 2 with a thickness of 325 nm;

[0048] After the deposition of the amorphous silicon film 2 is completed, a metal aluminum film 3 is deposited on the amorphous silicon film 2 by sputtering with an aluminum target with a purity of 99.9999% in the same vacuum chamber. The process conditions are as follows: the deposition pressure is 1 Pa, The optical power is 80W, the flow rate of argon gas is 20sccm, the substrate temperature is 150°C, and the coating time is 1.5min, to obtain a metal aluminum film 3 with a thickness of 18nm;

...

Embodiment 3

[0054] Such as figure 1 As shown, a layer of amorphous silicon thin film 2 is deposited on a glass substrate 1 using an intrinsic silicon target with a purity of 99.9999% by magnetron sputtering technology. The specific process conditions are: the deposition pressure is 2.0Pa, and the glow power is 60W , the flow rate of argon gas is 30 sccm, the substrate temperature is 100° C., and the deposition time is 36 minutes to obtain an amorphous silicon thin film 2 with a thickness of 360 nm;

[0055] After the deposition of the amorphous silicon film 2 is completed, a metal aluminum film 3 is sputtered and deposited on the amorphous silicon film 2 in the same vacuum chamber using an aluminum target with a purity of 99.9999%. The process conditions are as follows: the deposition pressure is 2Pa, The optical power is 40W, the flow rate of argon gas is 30sccm, the substrate temperature is 100°C, and the coating time is 40s to obtain a metal aluminum film 3 with a thickness of 6nm;

...

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Abstract

The invention relates to the field of preparation of a polysilicon thin film material, especially to a preparation method of a polysilicon thin film material. The method comprises the following steps: depositing an amorphous silicon film and a metal aluminum film successively on a glass substrate by using a magnetron sputtering technology so as to obtain a composite thin film; and carrying out laser irradiation on the composite thin film and carrying out crystallization on the amorphous silicon film, thereby obtaining a polysilicon thin film material. When the amorphous silicon film and the metal aluminum film are successively deposited by using the magnetron sputtering technology, the temperature is not higher than 150 DEG C. According to the provided preparation method, the amorphous silicon film and the metal aluminum film are obtained by using the magnetron sputtering technology and no dangerous gas like silane is required; the highest temperature does not exceed 150 DEG C during the process of successive deposition of the amorphous silicon film and the metal aluminum film with the magnetron sputtering technology, so that the cheap glass substrate can be used; and the temperature of the polysilicon thin film preparation process is low, thereby substantially reducing the energy consumption.

Description

technical field [0001] The invention relates to the field of preparation of polysilicon thin film materials, in particular to a preparation method of polysilicon thin film materials. Background technique [0002] Polycrystalline silicon thin film materials are widely used in solar cells, thin film field effect transistors and other fields due to their advantages such as abundant raw materials, easy large-area deposition, excellent photoelectric performance, and high carrier mobility. At present, the commonly used preparation methods of polysilicon thin film materials can be divided into two categories, one is the direct deposition method, generally using chemical vapor deposition technology, including plasma enhanced chemical vapor deposition (PECVD), low pressure chemical vapor deposition (LPCVD), hot wire Chemical vapor deposition (HWCVD), at a temperature above 600°C, uses reactive gases such as silane to directly deposit polysilicon films on the substrate. Due to the hi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/203H01L21/268
CPCH01L21/02532H01L21/02422H01L21/02595H01L21/268
Inventor 郝会颖何明
Owner CHINA UNIV OF GEOSCIENCES (BEIJING)
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