Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Quartz crucible for single crystal growth and preparation method of quartz crucible for single crystal growth

A quartz crucible and single crystal technology, applied in the field of ceramics, can solve problems such as crucible cracking, and achieve the effects of good chemical durability, strong covalent bond characteristics, and high elasticity

Inactive Publication Date: 2015-03-04
JIANGSU UNIV OF SCI & TECH
View PDF10 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Purpose of the invention: the present invention proposes a quartz crucible for single crystal growth to solve the problem of crucible cracking in the production of large-sized crucibles

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Quartz crucible for single crystal growth and preparation method of quartz crucible for single crystal growth

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0015] A quartz crucible for single crystal growth, 0.5mm natural silica sand, 10nm nano-silicon dioxide, 0.5μm aluminum nitride, 0.5μm silicon nitride are mixed evenly in a mass ratio of 90:1:1:2 In the crucible mold, the outer layer is formed by melting at 1500°C; the thickness of the outer layer is 8mm.

[0016] After mixing, 0.5mm pure quartz and 50nm nano-silicon dioxide particles are mixed at a mass ratio of 90:2. They are melted at 1500° C. to form an inner layer inside the outer layer, and the thickness of the inner layer is 1 mm.

[0017] The dimensions of the quartz crucible are as follows: outer diameter 300 mm, height 200 mm.

[0018] Experimental results: The inner layer of the prepared crucible is transparent and free of bubbles. It can be used continuously for 100 hours at a high temperature of 1500 ℃, and its strength reaches 200MPa without cracking.

Embodiment 2

[0020] A quartz crucible for single crystal growth, mix 2mm natural silica sand, 80nm nano-silica, 0.5μm alumina, 0.5μm silicon nitride in a mass ratio of 85:0.5:0.5:1 and put them into the crucible mold evenly In the middle, the outer layer is formed by melting at 1500°C; the thickness of the outer layer is 10mm.

[0021] After mixing, 1.5mm pure quartz and 20nm nano-silicon dioxide particles are mixed at a mass ratio of 90:10. They are melted at 1500° C. to form an inner layer inside the outer layer, and the thickness of the inner layer is 2 mm.

[0022] The dimensions of the quartz crucible are as follows: outer diameter 300 mm, height 200 mm.

[0023] Experimental results: The inner layer of the prepared crucible is transparent and free of bubbles. It can be used continuously at a high temperature of 1500°C for 40 hours at one time, and its strength reaches 190MPa without cracking.

Embodiment 3

[0025] A quartz crucible for single crystal growth. Mix 1mm natural silica sand, 100nm nano-silicon dioxide, 0.5μm titanium oxide, and 0.5μm silicon nitride in a mass ratio of 95:1.5:1.5:3 and put them evenly into the crucible mold In the middle, the outer layer is formed by melting at 1500°C; the thickness of the outer layer is 9mm.

[0026] After mixing, 2mm pure quartz and 100nm nanometer silicon dioxide particles are mixed at a mass ratio of 90:5. Melted at 1500° C. to form an inner layer inside the outer layer, the thickness of the inner layer is 1.5 mm.

[0027] The dimensions of the quartz crucible are as follows: outer diameter 300 mm, height 200 mm.

[0028] Experimental results: The inner layer of the prepared crucible is transparent and free of bubbles. It can be used continuously for 60 hours at a high temperature of 1500°C, and its strength reaches 180MPa without cracking.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle diameteraaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a quartz crucible for single crystal growth. The quartz crucible comprises an inner layer and an outer layer, wherein the inner layer is prepared from silicon dioxide particles being 0.5mm-2mm, nano silicon dioxide being smaller than 100nm, the outer layer is prepared from silicon dioxide particles being 0.5mm-2mm, nano silicon dioxide being smaller than 100nm, a stable-phase substance and silicon nitride in proportion; the stable-phase substance is any one of titanium oxide, zirconium oxide, aluminum oxide, titanium nitride, aluminum nitride and zirconium nitride. According to the quartz crucible for single crystal growth and the preparation method of the quartz crucible for single crystal growth disclosed by the invention, the quartz crucible production is divided into inner layer production and outer layer production, wherein the inner layer is made from synthesized quartz, and the particle sizes of the quartz particles including large particles and small particles are controlled; in the outer layer, the quartz strength is controlled by adding a reinforcing phase which is natural silica sand silicon dioxide, and a stable phase. According to a preparation method of the quartz crucible, physical properties such as high strength, good durability and high outer-layer viscosity of the quartz crucible can be provided, and cracking and silicon leakage of the quartz crucible due to high-temperature heating can be prevented.

Description

technical field [0001] The invention belongs to the field of ceramics, and in particular relates to a quartz crucible for single crystal growth and a preparation method thereof. Background technique [0002] In recent years, quartz crucibles have gradually developed in the direction of large sizes for energy saving and consumption reduction. Due to the existence of a series of phase transitions in pure quartz, there are changes in the temperature field during single crystal processing, and these changes affect the temperature of the crucible substrate, resulting in local temperature differences. The pulling method is the main process for producing single crystal growth. In production, it is to immerse the seed crystal in the silicon melt contained in the quartz crucible, then rotate the seed crystal rope, move upward slowly, and grow out through the solid-liquid interface. single crystal ingot. A single crystal growth device for pulling method usually includes a quartz cru...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/10
Inventor 高延敏李丽英陆介平韩莲赵君
Owner JIANGSU UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com