Novel method for manufacturing LED chips

Abstract

The invention discloses a novel method for manufacturing LED chips. The novel method includes performing MESA photoetching and NP (negative and positive) photoetching, and particularly includes performing vacuum evaporation on the surfaces of epitaxial slices to obtain ITO (indium tin oxide) layers, then coating photoresist on the surfaces of the epitaxial slices, then performing MESA photoetching on the epitaxial slices to obtain photoresist layers with MESA pattern layers, etching ITO of the ITO layers and downwardly etching the surfaces of the epitaxial slices; removing the photoresist layers with the MESA pattern layers; performing vacuum evaporation on steps of the ITO layers and N-GaN layers to obtain SiO<2> layers, coating photoresist on the steps of the ITO layers and the N-GaN layers, and performing NP photoetching on the photoresist layers to obtain photoresist layers with NP patterns; etching the SiO<2> layers; forming P electrodes and N electrodes in regions obtained after the SiO<2> layers are etched; removing the photoresist layers with the NP pattern layers. The novel method has the advantages that the production cost can be effectively reduced, the production cycle can be shortened, and the yield can be increased.

Description

technical field [0001] The invention relates to the field of LED manufacture and application, in particular to a method for manufacturing a novel LED chip. Background technique [0002] LED chip is an energy-saving and environmentally friendly product. It is a light-emitting diode. Its working principle is to convert electrical energy into light energy. It has low energy consumption, high brightness, and long life. Its development is very promising, and its initial application is only in experimental research and development. stage. In recent years, with the development of science and technology, its manufacturing process has gradually matured, and it has gradually entered mass production in factories, and its application has become more extensive. [0003] The finished structure of the LED chip is as follows figure 1 shown. The production process of LED chips is to make a single chip on an epitaxial wafer (2 inches). The size of a single chip is small and cannot be disti...

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Problems solved by technology

[0013] However, the above-mentioned four-lead process is not conducive to cost saving, and the production cycle is long, which is not convenient for large-scale production. At the same time, the poor photolithography station is the main factor affecting the yield. Due to the four-lead process, too many times of photolithography, the yield rate Low, which leads to the higher price of LED products than ordinary optical devices, which limits its large and rapid development

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