Transistor and formation method thereof

Abstract

Provided is a transistor and a formation method thereof. The formation method of the transistor include: providing a semiconductor substrate; successively forming, on the surface of the semiconductor substrate, a gate dielectric layer, a first barrier layer on the surface of the gate dielectric layer, and a sacrificial layer on the surface of the first barrier layer; forming an interlayer dielectric layer on the surface of the semiconductor substrate, wherein the surface of the interlayer dielectric layer is aligned to the top of the sacrificial layer; removing the sacrificial layer to form a slot; forming a second barrier layer, which covers the first barrier layer, in the slot, wherein the morphology of the second barrier layer and morphology of the first barrier layer on which the sacrificial layer has been removed are in complementation; forming a metal layer fully filling the slot on the surface of the second barrier layer, wherein the surface of the metal layer is aligned to the top of the interlayer dielectric layer. This invention reduces the leakage current of the gate of the transistor and improves the reliability and electrical properties of the transistor.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a transistor and a method for forming the transistor. Background technique [0002] The main semiconductor device of integrated circuits, especially VLSIs, is metal-oxide-semiconductor field effect transistors (MOS transistors). With the continuous development of integrated circuit manufacturing technology, the technology node of semiconductor devices is continuously reduced, and the geometric size of transistors is continuously reduced following Moore's law. When the size of the transistor is reduced to a certain extent, various secondary effects caused by the physical limit of the transistor appear one after another, and it becomes more and more difficult to scale down the feature size of the transistor. Among them, in the field of transistor and semiconductor manufacturing, the most challenging thing is how to solve the problem of large leakage current of transistor...

AI Technical Summary

Problems solved by technology

[0004] Although the introduction of a high-k metal gate can reduce the leakage current of the transistor to a certain extent, the problems of large leakage current and poor reliability of the formed transistor still exist due to the difficulty in controlling the formation process of the transistor.

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