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Method for preparing silicon carbide bonded silicon nitride composite material by using microwave sintering process

A technology of microwave sintering and composite materials, which is applied in the field of silicon nitride and silicon carbide composite materials, can solve problems such as cracks and material peeling, and achieve the effects of accelerating chemical reactions, fast heating speed, and short production cycle

Inactive Publication Date: 2014-12-03
WUHAN UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

During use, there is a difference in the volume expansion coefficient between the interior and exterior of the composite material, which will cause problems such as spalling and cracking of the material during thermal cycling

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] A method for preparing silicon nitride bonded silicon carbide composite materials by microwave sintering method. First, 50~60wt% silicon carbide particles, 20~25wt% silicon carbide powder, 15~30wt% elemental silicon powder, 1~2wt% carboxymethyl cellulose and 1~3wt% water are mixed and formed. Put the shaped green body into a vacuum microwave sintering furnace, first evacuate until the pressure in the microwave sintering furnace is ≤20Pa, then fill it with nitrogen, and then sinter in a nitrogen atmosphere at 1300~1400°C for 0.5~1.5 hours , that is, silicon nitride combined with silicon carbide composite material.

Embodiment 2

[0025] A method for preparing silicon nitride bonded silicon carbide composite material by microwave sintering method. First, 60~70wt% silicon carbide particles, 10~20wt% silicon carbide powder, 10~25wt% elemental silicon powder, 3~4wt% carboxymethyl cellulose and 4~5wt% water are mixed and formed. Put the shaped green body into a vacuum microwave sintering furnace, first evacuate until the pressure in the microwave sintering furnace is ≤20Pa, then fill it with nitrogen, and then sinter in a nitrogen atmosphere at 1400~1500°C for 1.5~3.0 hours , that is, silicon nitride combined with silicon carbide composite material.

Embodiment 3

[0027] A method for preparing silicon nitride bonded silicon carbide composite material by microwave sintering method. Firstly, 70~80wt% silicon carbide particles, 5~10wt% silicon carbide powder, 5~20wt% elemental silicon powder, 2~3wt% carboxymethyl cellulose and 3~4wt% water are mixed and formed. Put the shaped green body into a vacuum microwave sintering furnace, first evacuate until the pressure in the microwave sintering furnace is ≤20Pa, then fill it with nitrogen, and then sinter in a nitrogen atmosphere at 1500~1600°C for 3~5 hours , that is, silicon nitride combined with silicon carbide composite material.

[0028]

[0029] Compared with the prior art, this specific embodiment has the following positive effects:

[0030] In this specific embodiment, the microwave sintering method is used to utilize the catalytic and non-thermal effects of microwaves to promote solid-phase diffusion between substances. The density and mechanical properties of the final product are si...

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Abstract

The invention relates to a method for preparing a silicon carbide bonded silicon nitride composite material by using a microwave sintering process. The method is characterized by comprising the following steps: mixing the following components in percentage by weight: 50-80 percent of silicon carbide particles, 5-25 percent of silicon carbide powder, 5-30 percent of silicon powder, 1-4 percent of carboxymethyl cellulose and 1-5 percent of water, and molding; putting a molded blank body into a vacuum microwave sintering furnace, vacuumizing until the pressure intensity in the microwave sintering furnace is less than or equal to 20Pa, filling nitrogen, and sintering for 0.5-5 hours in a nitrogen atmosphere at 1300-1600 DEG C so as to obtain the silicon carbide bonded silicon nitride composite material. The method is short in production cycle and high in production efficiency; and the prepared silicon carbide bonded silicon nitride composite material is uniform in phase distribution and relatively high in strength, and has excellent thermal shock resistance, oxidation resistance, high-temperature creep resistance and erosion resistance.

Description

technical field [0001] The invention belongs to the technical field of silicon nitride combined with silicon carbide composite materials. In particular, it relates to a method for preparing a silicon nitride bonded silicon carbide composite material by a microwave sintering method. Background technique [0002] The microhardness of silicon nitride and silicon carbide is second only to a few superhard substances such as diamond, cubic boron nitride, and boron carbide. In addition, silicon carbide has excellent thermal conductivity and low thermal expansion rate, making silicon nitride Combined with silicon carbide composite material has excellent thermal shock resistance. At the same time, silicon nitride combined with silicon carbide has excellent chemical properties and can withstand the corrosion of almost all inorganic acids (except hydrofluoric acid) and some alkalis. In industrial applications, silicon nitride combined with silicon carbide resists the erosion of molte...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/565C04B35/64
Inventor 魏耀武
Owner WUHAN UNIV OF SCI & TECH
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