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Light-emitting diode led growth method with p-type layer roughening

A technology of light-emitting diodes and growth methods, which is applied in the field of LED growth with roughened P-type layers, can solve problems affecting chip technology, device structure damage, etc., and achieve the effect of improving light extraction efficiency

Active Publication Date: 2017-01-18
EPITOP PHOTOELECTRIC TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Although the use of these technologies has enabled GaN-LEDs to achieve significant optoelectronic performance improvements in recent years, there are still many problems to be discovered in GaN epitaxy technology, and there is still room for further improvement in GaN growth technology
In particular, the existing GaN-LED growth technology will cause adverse damage to the device structure and affect the chip process

Method used

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  • Light-emitting diode led growth method with p-type layer roughening
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  • Light-emitting diode led growth method with p-type layer roughening

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specific Embodiment 1

[0059] GaN blue LED with roughened P-type layer (using GaN spherical crystal as roughening medium)

[0060] 1. On the Veeco M℃VD K465I machine, use a patterned sapphire substrate. When the surface temperature of the substrate material (Figure 2201 layer) rises to about 530℃, keep the growth pressure at 500 Torr. Pass trimethylgallium (60ml / min) and ammonia gas (NH 3 )50l / min for 3 minutes, trimethylgallium and NH 3 At this temperature, it decomposes and reacts chemically to form an amorphous buffer growth layer with a thickness of 20nm.

[0061] 2. Increase the temperature of the reaction chamber to 1000°C. At this time, the buffer layer undergoes decomposition and polymerization to form uniformly distributed nucleation islands. Then, on this basis, the pressure is maintained at 500 Torr, and trimethylgallium (200ml / min) and NH 3 50l / min reaction for 30 minutes. This growth process can make the crystal nucleus islands grow and merge, without doping any impurities to form a...

specific Embodiment 2

[0068] GaN blue light LED with roughened P-type layer (using AlN spherical crystal as roughening medium)

[0069] 1. On the Veeco M℃VD K465I machine, use a graphic sapphire substrate, when the substrate material ( figure 2 When the surface temperature of the 201 layer) rises to about 530° C., the growth pressure is maintained at 500 Torr. Pass trimethylgallium (60ml / min) and ammonia gas (NH 3 )50l / min for 3 minutes, trimethylgallium and NH 3 At this temperature, it decomposes and reacts chemically to form an amorphous buffer growth layer with a thickness of 20nm.

[0070] 2. Increase the temperature of the reaction chamber to 1000°C. At this time, the buffer layer undergoes decomposition and polymerization to form uniformly distributed nucleation islands. Then, on this basis, the pressure is maintained at 500 Torr, and trimethylgallium (200ml / min) and NH350l / min reacted for 30 minutes. This growth process can make the crystal nucleus islands grow and merge, without doping...

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Abstract

The embodiment of the invention provides an LED growth method for P-type layer coarsening. The method includes the steps that when the temperature ranges from 520 DEG C to 560 DEG C, a metal source is fed onto a substrate, and the metal source reacts with ammonia to form a buffer layer; when the temperature rises to 800-1000 DEG C, the buffer layer forms a non-doping layer; when the temperature rises to 1000-1100 DEG C, an N-type doping layer grows on the surface of the non-doping layer; a quantum well layer grows on the surface of the N-type doping layer; a P-type doping layer grows on the surface of the quantum well layer; when the temperature is decreased to 500-700 DEG C, the metal source is fed onto the surface of the P-type doping layer, so that a thin metal source layer is formed; when the temperature rises to 700-800 DEG C, the thin metal source layer is decomposed into prills, and the prills react with V-group gas to form spherical crystal. According to the method, bad damage to device structures can be avoided, and no special effect on the chip process is caused.

Description

technical field [0001] Embodiments of the present invention relate to a light emitting diode (Lighting Emitting Diode, referred to as LED) growth technology, in particular to a P-type layer roughened LED growth method. Background technique [0002] Wide bandgap materials represented by gallium nitride (GaN) are the third-generation semiconductor materials after silicon (Si) and gallium arsenide (GaAs), which are used to make light-emitting diodes (LEDs), lasers, detectors, Electronic devices such as high-frequency high-power transistors. [0003] Although the production of GaN-LED is relatively mature and its application is becoming more and more extensive, it is currently performing well in many fields such as landscape lighting, street lighting, backlight, and indoor lighting. At the same time, concept LED applications and smart LED applications are gradually becoming popular. However, with the widespread application of LEDs, LEDs still need to solve problems such as how...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/22
CPCH01L33/007H01L33/22
Inventor 黄小辉米亭亭周德保康建梁旭东
Owner EPITOP PHOTOELECTRIC TECH
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