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Perovskite solar cell and preparation method of perovskite solar cell by solution method

A solar cell and perovskite technology, applied in the field of solar cells, can solve the problems that nano-particle ZnO solution cannot be stored for a long time, and achieve the effects of large-scale production, simplified process flow, and improved preparation efficiency

Active Publication Date: 2014-11-05
48TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in the above preparation process, there is a need to prepare a mesoporous titanium oxide layer (TiO 2 as electron transport layer) or synthesis of nanoparticulate zinc oxide (ZnO), mesoporous TiO 2 The layer needs to be sintered at high temperature (above 450°C), and the synthesized nanoparticle ZnO solution cannot be stored for a long time

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  • Perovskite solar cell and preparation method of perovskite solar cell by solution method

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Embodiment 1

[0035] see figure 1 , the perovskite solar cell consists of a substrate 1 , a transparent electrode layer 2 , an electron transport layer 3 , a light absorbing layer 4 , a hole transport layer 5 and a top electrode layer 6 from top to bottom.

[0036] Wherein, the material of the substrate 1 is glass or flexible plastic; the material of the transparent electrode layer 2 is indium tin oxide or fluorine tin oxide; the material of the electron transport layer 3 is an electron transport material; the material of the light absorption layer 4 is It is a perovskite structure photovoltaic material; the material of the hole transport layer 5 is a hole transport material; the top electrode layer 6 is a metal electrode. The electron transport material is a metal oxide; the perovskite structure photovoltaic material is ABX 3 Organic-inorganic hybrid perovskite with crystal structure; the hole-transporting material is an organic material or an inorganic material. The electron transport ...

Embodiment 2

[0038] The preparation method of the solar cell described in embodiment 1 comprises the following steps:

[0039] Formulated PbI 2 Solution: PbI 2 The concentration is 1 mol / L, and the solvent is dimethylformamide. Prepare CH 3 NH 3 I solution: concentration 10 mg / mL, dissolved in isopropanol. Formulated TiO 2 Precursor solution: tetrabutyl titanate (tetra-n-butyl titanate) was mixed with ethanolamine at a molar ratio of 1:1, and then dissolved in 2-methoxyethanol solution.

[0040] (1) Select ITO glass with a square resistance of 15Ω / □, a thickness of 3mm, and a transmittance of 85% as the substrate material;

[0041] (2) Coating TiO on the substrate by solution spin coating 2 Precursor solution, low temperature treatment at 150°C to 200°C for 30 minutes on a heating platform to obtain TiO with a thickness of about 30-60nm 2 Thin film as electron transport layer;

[0042] (3) Spin-coat PbI on the substrate deposited with the electron transport layer 2 solution, ...

Embodiment 3

[0047] The preparation method of the solar cell described in embodiment 1 comprises the following steps:

[0048] Formulated PbI 2 Solution: PbI 2 The concentration is 1 mol / L, and the solvent is dimethylformamide. Prepare CH 3 NH 3 I solution: concentration 10 mg / mL, dissolved in isopropanol. Preparation of ZnO precursor solution: zinc acetate (Zn(Ac) 2 2H 2 O) After mixing with ethanolamine at a molar ratio of 1:1, dissolve in 2-methoxyethanol solution.

[0049] 4. Preparation of device functional layer, see figure 1 , mainly including various functional layers stacked on the glass substrate 1 and the transparent ITO electrode 2: electron transport layer 3, light absorbing layer 4, hole transport layer 5, and metal electrode 6, the preparation process is as follows:

[0050] (1) Select ITO glass with a square resistance of 15Ω / □, a thickness of 3mm, and a transmittance of 85% as the substrate material;

[0051] (2) Coating TiO on the substrate by solution spin coa...

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Abstract

The invention discloses a perovskite solar cell and a preparation method of the perovskite solar cell by a solution method. The perovskite solar cell comprises a substrate, a transparent electrode, an electron transfer layer, a light absorption layer, a hole transfer layer and a top electrode which are sequentially laminated, wherein the light absorption layer is a photovoltaic material light absorption layer in a perovskite structure. The electron transfer layer, the perovskite material light absorption layer and the hole transfer layer can be prepared by the solution method in a low-temperature (below 200 DEG C) air environment, and particularly, the electron transfer layer does not require nano particles treated or synthetized at a high temperature (above 450 DEG C), so that a technological process can be simplified, the cost is lowered, the preparation efficiency of the cell is improved, and mass production is achieved.

Description

technical field [0001] The invention belongs to the technical field of solar cells, in particular to a perovskite solar cell and a solution method preparation method thereof. Background technique [0002] A solar cell is a device that directly converts light energy into electrical energy through the photoelectric effect or photochemical effect, also known as a photovoltaic cell. As solar power generation is used more and more widely as a clean energy source, the requirements for the preparation process of solar cells and other indicators are simpler and faster. The preparation process of ordinary solar cells mostly uses monocrystalline silicon or polycrystalline silicon as crystalline silicon solar cells that absorb sunlight. Due to the shortcomings of this type of battery such as long preparation process, high energy consumption in the preparation process, and expensive preparation equipment, it is prone to the problems of long battery production cycle, high input and low ...

Claims

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Application Information

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IPC IPC(8): H01L31/0256H01L31/04H01L31/18
CPCH10K71/12H10K85/30H10K30/151H10K30/152H10K2102/00Y02E10/549Y02P70/50
Inventor 陆运章刘文峰杨晓生
Owner 48TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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