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Bonding copper alloy wire for semiconductor device and manufacturing method of bonding copper alloy wire

A manufacturing method and technology of copper alloy, applied in semiconductor devices, semiconductor/solid-state device parts, electric solid-state devices, etc., can solve the problems of ball neck fatigue failure, increase in copper wire hardness, increase product cost, etc. Oxidation ability, increased stability, and the effect of strong electrical conductivity

Active Publication Date: 2014-10-08
NICHE TECH KAISER SHANTOU
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the copper bonding wire has the following problems: (1) the wire is easy to oxidize; (2) the wire is high in hardness, and it is easy to cause damage to the IC when bonding; (3) it is easily corroded; (4) the heat cycle after plastic sealing During the process, the ball neck is prone to fatigue failure
However, the palladium plating process increases the cost of the product and leads to a further increase in the hardness of the copper wire

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] In this embodiment, the manufacturing method of bonding copper alloy wires for semiconductor devices includes the following steps in sequence:

[0032] (1) By weight, 100 parts of copper and 0.5 parts of palladium are fused into a copper-palladium alloy melt, and then subjected to wire drawing treatment to obtain a copper-palladium alloy wire rod with a diameter of 5 mm;

[0033](2) Drawing the copper-palladium alloy wire rod obtained in step (1) for multiple passes to obtain a copper-palladium alloy wire with a diameter of 50 microns;

[0034] In this step (2), the number of drawing passes is 3, and the copper-palladium alloy wire rod is successively subjected to rough drawing (drawing from a diameter of 5 mm to a diameter of 1.0 mm), medium rough drawing (drawing from a diameter of 1.0 mm to a diameter of 0.1 mm), and fine drawing. Drawing (drawing from a diameter of 0.1 mm to a diameter of 0.05 mm, or 50 microns); the first annealing treatment is performed after the ...

Embodiment 2

[0041] In this embodiment, the manufacturing method of bonding copper alloy wires for semiconductor devices includes the following steps in sequence:

[0042] (1) By weight, 100 parts of copper, 0.5 parts of palladium and 0.005 parts of phosphorus are melted into a copper-palladium alloy melt, and then subjected to wire drawing treatment to obtain a copper-palladium alloy wire rod with a diameter of 8 mm;

[0043] (2) drawing the copper-palladium alloy wire obtained in step (1) for multiple passes to obtain a copper-palladium alloy wire with a diameter of 25 microns;

[0044] In this step (2), the number of drawing passes is 4, and the copper-palladium alloy wire rod is successively subjected to rough drawing (drawn from 8 mm in diameter to 1.2 mm in diameter), medium rough drawing (drawn from 1.2 mm in diameter to 0.15 mm in diameter), fine drawn (drawn from 0.15 mm diameter to 0.05 mm diameter) and micro-drawn (drawn from 0.05 mm diameter to 25 microns in diameter); first an...

Embodiment 3

[0052] In this embodiment, the manufacturing method of bonding copper alloy wires for semiconductor devices includes the following steps in sequence:

[0053] (1) By weight, 100 parts of copper, 1.5 parts of palladium and 0.004 parts of magnesium are melted into a copper-palladium alloy melt, and then subjected to wire drawing treatment to obtain a copper-palladium alloy wire rod with a diameter of 6 mm;

[0054] (2) Drawing the copper-palladium alloy wire obtained in step (1) for multiple passes to obtain a copper-palladium alloy wire with a diameter of 20 microns;

[0055] In this step (2), the number of drawing passes is 4, and the copper-palladium alloy wire rod is sequentially subjected to rough drawing (drawn from 6 mm in diameter to 1.0 mm in diameter), medium rough drawing (drawn from 1.0 mm in diameter to 0.1 mm in diameter), fine Drawing (drawing from 0.1 mm diameter to 0.05 mm diameter) and micro-drawing (drawing from 0.05 mm diameter to 20 microns in diameter); the...

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Abstract

The invention relates to a bonding copper alloy wire for a semiconductor device. The bonding copper alloy wire comprises the following components in parts by weight: 100 parts of copper, 0.5-1.5 parts of palladium and 0.0005-0.002 part of hydrogen. The invention also provides a manufacturing method of the bonding copper alloy wire. The manufacturing method comprises the steps of: (1) melting copper and palladium into a copper-palladium alloy melt, and then carrying out drawing process to obtain a copper-palladium alloy wire rod; (2) carrying out multi-pass drawing on the copper-palladium alloy wire rod to obtain a copper-palladium alloy wire, wherein during the drawing and after the drawing is completed, annealing treatment is carried out, and a mixture of nitrogen and hydrogen is adopted as the annealing atmosphere in the last-time annealing process; (3) after the last-time annealing process is completed, introducing the palladium-copper alloy wire into the aqueous solution of ethanol for cooling to obtain the bonding copper alloy wire. The bonding copper alloy wire disclosed by the invention has the advantages of relatively strong antioxidant capacity, relatively large bonding area and relatively high bonding strength when the ball bonding is carried out under an N2 atmosphere, strong conductivity and high reliability; the manufacturing method is simple and feasible.

Description

technical field [0001] The invention relates to bonding materials for semiconductor devices (such as integrated circuits), in particular to a bonding copper alloy wire for semiconductor devices and a manufacturing method for the bonding copper alloy wire. Background technique [0002] Bonding wire is the main way to connect the chip to the external packaging substrate (substrate) and / or multilayer circuit board (PCB). The development trend of bonding wire, from the application direction, is mainly wire diameter miniaturization, high floor life (floor life) and high bobbin length; from the chemical composition, there are mainly copper wires (including bare copper wires, palladium-plated copper wires, flash Gold palladium-plated copper wire) has largely replaced gold wire in the semiconductor field, while silver wire and silver alloy wire have replaced gold wire in LED and some IC packaging applications. [0003] Compared with gold wire, the main advantages of copper wire are...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22C9/00C22F1/08B21C1/02H01L23/49
CPCH01L24/43H01L2224/43H01L2224/43848H01L2224/45H01L2224/45147H01L2924/00011H01L2924/00H01L2924/01046H01L2924/013H01L2924/00013H01L2924/01001H01L2924/01012H01L2924/01083H01L2924/01015H01L2924/00012H01L2924/01005
Inventor 周振基周博轩任智
Owner NICHE TECH KAISER SHANTOU
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