Ferro-electric field effect transistor based on structured carbon nano tube striped array and manufacturing method thereof

Abstract

The invention discloses a ferro-electric field effect transistor based on a structured carbon nano tube striped array and a manufacturing method of the ferro-electric field effect transistor. According to the unit structure of the transistor, a bottom electrode layer (1) is arranged on the bottom layer, a ferro-electric film insulated gate layer (2) and a structured carbon nano tube striped array channel layer (3) are sequentially arranged on the middle layer, and a top layer is arranged on the structured carbon nano tube striped array channel layer (3) and comprises a transistor source electrode (4) and a transistor drain electrode (5); carbon nano tubes are single-walled carbon nano tubes, or double-walled carbon nano tubes or multi-walled carbon nano tubes. According to the ferro-electric field effect transistor, the on-state current and the switch ratio are large, carrier mobility is high, the starting voltage is small, the storage window is wide, and meanwhile the ferro-electric field effect transistor has the advantages of being simple in structure and a buffering layer is not needed, interface contact between a ferro-electric layer and a semiconductor layer is good, and large-area soft devices are easy to obtain. The manufacturing method is simple in technology, convenient to operate and low in cost and dispense with expensive equipment, and large-area and large-scale industrial production is easy to realize.

Description

technical field [0001] The invention belongs to the technical field of memory, and in particular relates to a ferroelectric field-effect transistor based on a regular carbon nanotube stripe array and a preparation method thereof. Background technique [0002] Ferroelectric memory has the advantages of non-volatility, low power, high read and write speed, high storage density, excellent radiation resistance, etc., and has very broad application prospects in the fields of electronic information, aerospace, instrumentation, and national defense. Transistor-type ferroelectric memory is an ideal configuration of ferroelectric memory. Its unit is only composed of a ferroelectric field effect transistor (FeFET). Compared with capacitive ferroelectric memory, it has non-destructive properties. It has the advantages of permanent readout, simple structure, higher storage density, and lower power consumption. The ferroelectric field effect transistor uses a ferroelectric thin film as ...

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Problems solved by technology

When a single carbon nanotube is used as the channel layer of a ferroelectric field effect transistor, the selected single carbon nanotube exhibits semiconducting properties, and is generally operated by electron beam lithography or under an atomic force microscope. Expensive and difficult to deposit source and drain electrodes; in addition, the on-state current of a ferroelectric field effect transistor with a single carbon nanotube as the channel layer is small, which brings great difficulties and complexity to the application of carbon nanotubes in devices sex

When the networked carbon nanotubes are used as the channel layer of the ferroelectric field effect transistor, the networked carbon nanotubes are generally prepared by the sol-gel method. The operation method is relatively simple, but the networked carbon nanotubes channel is mixed with a large amount of metallic carbon Although nanotubes can obtain a large on-state current, these metallic carbon nanotubes are easy to conduct with each other, which will reduce the switching ratio of the transistor and limit the further application of carbon nanotubes in devices.

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