Texture etching solution composition and texture etching method of crystalline silicon wafers

Abstract

Disclosed are a texture etching solution composition for a crystalline silicon wafer, and a texture etching method using the same. The texture etching solution composition for a crystalline silicon wafer includes a polymer formed by polymerizing a monomer that is substituted with a cyclic compound having 4 to 10 carbon atoms as well as at least one nitrogen atom. The texture etching solution composition and the texture etching method are capable of forming pyramids with a specific structure which can minimize a quality deviation of a texture within a region in formation of a micro-pyramid structure on the surface of the crystalline silicon wafer to increase luminous efficiency while reducing a reflectivity.

Description

technical field [0001] The invention relates to a texture etching liquid composition and a texture etching method for a crystalline silicon wafer, which can minimize the quality deviation of textures at different positions on the surface of the crystalline silicon wafer and improve light efficiency. Background technique [0002] In recent years, a solar cell, which has rapidly spread as a next-generation energy source, is an electronic component that directly converts solar energy, a clean energy, into electric energy, and is composed of a PN junction semiconductor substrate in which boron is added to The P-type silicon semiconductor in silicon is used as a substrate, and phosphorus is diffused on the surface to form an N-type silicon semiconductor layer. [0003] When light such as sunlight is irradiated on the substrate where the electric field is formed by the PN junction, the electrons (-) and holes (+) in the semiconductor are excited and become a state of free movement...

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Problems solved by technology

However, this etching method has the following disadvantages: it not only causes poor pyramid formation, but also causes an increase in light reflectivity and a decrease in efficiency, and requires additional ventilation.

However, these etching solutions all contain isopropanol with a relatively low boiling point. Since this isopropanol must be supplemented in the texturing process, it is not economical in terms of productivity and cost, and the isopropanol due to the supplementary input is reduced. The temperature gradient of the etching solution occurs, resulting in a large deviation in the quality of the texture at different positions on the surface of the silicon wafer, which may affect the uniformity

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