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Preparation method for high-purity and high-density WS2 lamellar nano structure

A nanostructured and lamellar technology is applied in the field of preparation of high-purity, high-density WS2 lamellar nanostructures, achieving the effects of controllable diameter and thickness, strictly controllable synthesis and growth conditions, and environmental friendliness.

Inactive Publication Date: 2014-04-23
CHINA UNIV OF GEOSCIENCES (BEIJING)
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

WS prepared by vapor deposition 2 In terms of nanostructures, the commonly used method is to use WO 3 as a precursor, then in H 2 It is vulcanized in the atmosphere of S or S vapor, and the resulting nanostructures are largely influenced by WO in terms of structure, morphology and quantity. 3 Precursor limitations

Method used

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  • Preparation method for high-purity and high-density WS2 lamellar nano structure
  • Preparation method for high-purity and high-density WS2 lamellar nano structure

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preparation example Construction

[0023] The present invention proposes a high-purity, high-density WS 2 The preparation method of lamellar nanostructure is characterized in that the method synthesizes high-density WS on a substrate coated with a tungsten film by thermally evaporating tungsten oxide and sulfur 2 Lamellar nanostructure, and comprising the following steps and content:

[0024] (1) The evaporation source used is commercially available analytically pure WO 3 powder and sulfur powder.

[0025] (2) Deposit a layer of metal with a thickness of 5-100 nm on a clean silicon wafer, gallium arsenide wafer, silicon carbide single wafer or aluminum oxide single wafer by magnetron sputtering coater or arc evaporation in advance. W film.

[0026] (3) In the vacuum tube furnace, there will be respectively equipped with WO 3 Alumina ceramic crucibles of powder and S powder, or filled with WO 3 The alumina ceramic crucible mixed with S powder is placed in the heating area in the center of the furnace, and t...

Embodiment 1

[0035] Embodiment 1: will house 0.5 g analytically pure WO 3 The powdered alumina ceramic crucible is placed in the central heating zone of the vacuum tube furnace, and a WO 3 An alumina ceramic crucible containing 1 g of analytically pure S powder was placed at a distance of 8 mm from the crucible of the powder, and a WO 3 A silicon wafer coated with a W film with a thickness of 40 nm was placed at 14 mm from the powder crucible.

[0036] Before heating, the whole system was evacuated first, and then 99.99 vol.% argon gas was introduced into the system, and repeated 2 times to remove the air in the system. Then the temperature was raised to 1050 °C at a rate of 30 °C / min and kept for 2 h. During the heating process, keep the flow rate of the carrier gas at 200 sccm, and finally cool down to room temperature naturally to obtain high-density WS on the substrate. 2 Lamellar nanostructures.

[0037] The synthesized sample is WS 2 Single crystal, no impurity phase (see figur...

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Abstract

The invention relates to a preparation method for a high-purity and high-density WS2 lamellar nano structure and belongs to the technical field of material preparation. The preparation method adopts a vacuum pipe type furnace and takes tungsten oxide and sulfur powder as evaporation sources; the WS2 lamellar nano structure is deposited by one-step synthesis through a hot evaporation method on a silicon wafer, a gallium arsenide wafer, a sapphire wafer, a silicon carbide single crystal wafer or an aluminum oxide wafer which is flat in surface and bright and clean under the protection of carrier gas. The method has the advantages of strict and controllable deposition condition, simple equipment and process, large output, low cost, environmental friendliness and the like. The obtained nano structure product is high in purity; the diameter thickness distribution is uniformly distributed and the size and the thickness are controllable; the nano structure has a wide application prospect in the aspects of photocell electrodes, lubricants, catalysts, nanoelectronics and the like.

Description

technical field [0001] The invention relates to a high-purity, high-density WS 2 The invention discloses a method for preparing a lamellar nanostructure, belonging to the technical field of material preparation. Background technique [0002] Due to its special microstructure and composition, the inorganic layered material tungsten disulfide has been widely used in solid lubricants or lubricating oil additives. In addition, tungsten disulfide also has broad application prospects in catalysts, lithium batteries, hydrogen storage, and electrochemistry. [0003] However, since the discovery of graphene, scientists quickly noticed that tungsten disulfide also has a graphene-like structure, which has aroused widespread interest. Layered graphene tends to be curled due to the unstable carbon atoms at the edge and its chemical bonds, so that the dangling carbon atoms at the edge form π bonds between each other and finally form carbon nanotubes or fullerenes. Therefore, graphene h...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/46C30B29/64C30B25/00B82Y40/00
Inventor 钱静雯彭志坚符秀丽
Owner CHINA UNIV OF GEOSCIENCES (BEIJING)
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