High power microwave plasma diamond film deposition device in tm021 mode

Abstract

The high-power microwave plasma diamond film deposition device in the TM021 mode of the present invention is composed of upper and lower cylinders, an adjustable upper chamber, a microwave reflection plate, a deposition platform, a microwave coaxial excitation port, a microwave quartz window, an air inlet and an outlet, and a measuring chamber. Composed of temperature holes and observation windows. This device has the electric field distribution of TM021 mode, which has the characteristics of concentrated electric field distribution in the microwave resonator cavity and stable excited plasma position. The device can optimize the distribution of plasma in the device in real time through its adjustment mechanism. A ring-shaped microwave quartz window placed under the deposition table prevents overheating, contamination and etching by the plasma. The inner wall of the resonant cavity is far away from the high-temperature plasma area, which weakens the heat radiation to the inner wall of the cavity and avoids the deposition of foreign matter. The main components of the device can be directly water-cooled. The above advantages enable this device to be applied to higher power microwave input to achieve high-efficiency deposition of large-area high-quality diamond films.

Description

technical field [0001] The invention belongs to the technical field of microwave plasma chemical vapor deposition, and in particular provides a high-power microwave plasma chemical vapor deposition device that can be applied to the preparation of large-area high-quality diamond films. Background technique [0002] Diamond has excellent properties such as high hardness, high room temperature thermal conductivity (greater than 20W / cm·K), low expansion coefficient, high chemical inertness, high optical transparency, etc. It is used in heat sinks of high-power electronic devices, high-power Industrial fields such as lasers and infrared windows have great application value. To achieve these important applications, large-area, high-quality self-supporting diamond films must be efficiently fabricated. [0003] Among various chemical vapor deposition methods, microwave plasma chemical vapor deposition (MPCVD) has become a high The preferred method for quality diamond films. [00...

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Problems solved by technology

[0010] The purpose of the present invention is to provide a kind of efficient high-power microwave plasma diamond film chemical vapor deposition device, it will be able to overcome the parts distances such as microwave window or microwave antenna, deposition chamber wall in existing various MPCVD diamond film deposition devices Due to the shortcoming that the plasma is close, the device is not easy to adjust and the direct water cooling is not easy to increase the microwave power of the MPCVD device, it can be applied to the efficient deposition of high-quality diamond films under high power conditions

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