An ellipsoidal high-power microwave plasma diamond film deposition device

Abstract

The present invention is an ellipsoidal high-power microwave plasma diamond film deposition device. The device consists of a stepped annular microwave coupling system, an annular quartz microwave window arranged at the step of the annular antenna, an ellipsoidal microwave resonant cavity, an adjustable deposition platform, Conical upper reflector and adjustable cylindrical lower reflector, air inlet and outlet, temperature measuring hole and observation window. This device utilizes the upper and lower focal points of the ellipsoid. The conical upper microwave reflector is located at the upper focal point, and the deposition platform is located at the lower focal point. The electric field distribution is concentrated, and the position of the excited plasma is stable and the density is high; the hidden microwave window avoids being heated and polluted by the plasma. , etching; the adjustable microwave lower reflector and deposition platform optimize the plasma distribution in real time; the inner wall of the ellipsoidal resonant cavity is far away from the high-temperature plasma area, which weakens the thermal radiation of the plasma to the inner wall of the chamber and avoids the deposition of foreign matter; the device All components are water cooled. This device can achieve high-efficiency deposition of large-area high-quality diamond films under high power.

Description

technical field [0001] The invention belongs to the technical field of microwave plasma chemical vapor deposition, and in particular provides a high-power microwave plasma chemical vapor deposition device that can be applied to the preparation of large-area high-quality diamond films. Background technique [0002] Diamond has excellent properties such as high hardness, high room temperature thermal conductivity (greater than 20W / cm·K), low expansion coefficient, high chemical inertness, high optical transparency, etc. It is used in heat sinks of high-power electronic devices, high-power Industrial fields such as lasers and infrared windows have great application value. To achieve these important applications, large-area, high-quality self-supporting diamond films must be efficiently fabricated. [0003] Among various chemical vapor deposition methods, microwave plasma chemical vapor deposition (MPCVD) has become a high The preferred method for quality diamond films. [00...

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Problems solved by technology

[0013] The purpose of the present invention is to provide a kind of efficient high-power microwave plasma diamond film chemical vapor deposition device, it will be able to overcome the parts distances such as microwave window or microwave antenna, deposition chamber wall in existing various MPCVD diamond film deposition devices The shortcomings of the microwave power increase of the MPCVD device, such as the proximity of the plasma, the difficulty of adjusting the device, and the difficulty of direct water cooling, etc., and absorbing the advantages of each device, design a perfect adjustment mechanism, the plasma will not damage the microwave window, and will not Carbon and carbon compounds deposit and cause pollution in the device chamber, all parts of the device are easy to be directly cooled by water, and can obtain a stable high-density plasma MPCVD device to achieve efficient deposition of large areas at high power The purpose of high quality diamond film

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