Preparation method for high-performance WC-Co nanocrystal cemented carbide

A cemented carbide and nanocrystalline technology is applied in the field of preparation of high-performance WC-Co nanocrystalline cemented carbide. The effect of low cost, high degree of densification and close connection of equipment

Inactive Publication Date: 2014-03-12
XIAMEN TUNGSTEN
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Since the nano raw material powder system has a very large surface energy, in the traditional liquid phase sintering process, in order to reduce the surface energy of the system, the WC grains will grow rapidly, so many scholars have studied the microwave sintering and rapid

Method used

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  • Preparation method for high-performance WC-Co nanocrystal cemented carbide
  • Preparation method for high-performance WC-Co nanocrystal cemented carbide
  • Preparation method for high-performance WC-Co nanocrystal cemented carbide

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Embodiment 1

[0025] See Figure 1 to Figure 3 As shown, the method for preparing a high-performance WC-Co nanocrystalline cemented carbide of the present invention includes the following steps:

[0026] A. Mixture preparation steps: select WC (tungsten carbide) powder with an average particle size of 70nm (such as figure 1 As shown), add Co (cobalt) powder with an average particle size of 0.8um (such as figure 2 Shown), VC (vanadium carbide) powder with an average particle size of 1μm and Cr with an average particle size of 1μm 3 C 2 (Chromium carbide) powder is the raw material, of which Co powder accounts for 12wt% of the total raw material, VC powder accounts for 0.50wt% of the total raw material, and Cr 3 C 2 0.5wt% of the total raw material powder, the balance is nano WC powder, the above four powders (WC powder, Co powder, VC powder and Cr 3 C 2 Powder) constitute the total raw materials; paraffin wax is added as a forming agent, and the addition amount of paraffin wax is 2wt% of the ab...

Embodiment 2

[0031] See Figure 4 As shown, the method for preparing a high-performance WC-Co nanocrystalline cemented carbide of the present invention includes the following steps:

[0032] A. Mixture preparation steps: select WC powder with an average particle size of 100nm, add Co powder with an average particle size of 0.8um, VC powder with an average particle size of 1μm and Cr with an average particle size of 1μm 3 C 2 Powder is the raw material, of which, Co powder accounts for 13wt% of the total raw materials, VC powder accounts for 1.3wt% of the total raw materials, and Cr 3 C 2 0.9wt% of the total raw materials of the powder, the rest is nano-WC powder; paraffin wax is added as a forming agent, and the addition amount of paraffin wax is 2wt% of the above-mentioned total raw materials; then, anhydrous alcohol is used as a medium for wet grinding and mixing in a rolling ball mill The ratio of cemented carbide grinding balls to solid raw materials is 5.5:1, and the liquid-to-solid ratio...

Embodiment 3

[0037] See Figure 5 As shown, the method for preparing a high-performance WC-Co nanocrystalline cemented carbide of the present invention includes the following steps:

[0038] A. Mixture preparation steps: select WC powder with an average particle size of 200nm, add Co powder with an average particle size of 0.6um, VC powder with an average particle size of 1μm and Cr with an average particle size of 1μm 3 C 2 Powder is the raw material. Among them, Co powder accounts for 10wt% of the total raw materials, VC powder accounts for 0.45wt% of the total raw materials, and Cr 3 C 2 0.6wt% of the total powder raw materials, the rest is nano-WC powder; paraffin wax is added as a forming agent, and the addition amount of paraffin wax is 2wt% of the above-mentioned total raw materials; then, anhydrous alcohol is used as a medium for wet grinding and mixing in a rolling ball mill The ratio of cemented carbide grinding balls to solid raw materials is 7:1, and the liquid-to-solid ratio of an...

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Abstract

A disclosed preparation method for high-performance WC-Co nanocrystal cemented carbide comprises: taking nanometer tungsten carbide (WC) powder, ultrafine cobalt (Co) powder and ultrafine vanadium carbide (Cr2C3) powder as raw material powders, employing an alcohol wet grinding technology, and performing vacuum sintering and hot isostatic pressing sintering to prepare the WC-Co nanocrystal cemented carbide. By employing the above method for preparing nanocrystal cemented carbide, WC crystal grain structure is complete and clearly visible, by employing a method prescribed in ISO4499-2 for calculating two hundred or more WC crystal grains and averaging, the WC average crystal grain is less than 150 nm, the hardness HV30 is 1900 or more, the strength TRS is 4000 MPa or more and the metallographic structure is A02B00C00. The technology is simple, the process control is convenient, the production cost is low, and the prepared nanocrystal cemented carbide has the advantages of high densification degree and excellent performances.

Description

Technical field [0001] The invention relates to the technical field of cemented carbide material manufacturing, in particular to a method for preparing a high-performance WC-Co nanocrystalline cemented carbide. Background technique [0002] The research and development of ultrafine and nano-structured cemented carbide around the refinement of grains is a hot spot in the field of cemented carbide technology in the world today. At present, the finest grain of cemented carbide that has been mass-produced is 0.2μm. [0003] In the preparation process of nano cemented carbide, the use of high-quality nano raw material powder is a very critical link. There are many methods for preparing nanopowders. In theory, any method that can produce fine grain size polycrystals can be used to make nanopowders. Laboratories usually use mechanical alloying method, fixed bed reaction method, spray drying-fluidized bed method, etc. to prepare nano WC powder or WC-Co composite powder, but because it is...

Claims

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Application Information

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IPC IPC(8): C22C29/08C22C1/05
Inventor 吴冲浒谢海唯郑爱钦肖满斗项忠楠谢颖
Owner XIAMEN TUNGSTEN
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