A processing method for obtaining a silicon carbide substrate surface with low processing damage

Abstract

The invention relates to a machining method for acquiring a silicon carbide substrate surface small in machining damage. The method includes the following steps that firstly, grinding materials are solidified into a grinding mat to obtain a fixed-grinding-material grinding mat serving as a grinding medium; secondly, a silicon carbide substrate is placed above the fixed-grinding-material grinding mat, the fixed-grinding-material grinding mat is made to rotate by grinding equipment, cooling and lubricating agents are added, and the surface of the silicon carbide substrate is machined to acquire the silicon carbide substrate surface small in machining damage. As a technical innovation, the machining method can greatly simplify silicon carbide substrate machining process steps, reduce research and development and production equipment input, improve machining efficiency, save grinding materials, protect working personnel and the environment and be used for acquiring the silicon carbide substrate surface small in machining damage.

Description

technical field [0001] The invention relates to a processing method for obtaining a silicon carbide substrate surface with low processing damage, and belongs to the technical field of silicon carbide substrate surface processing. Background technique [0002] The premise of the application of silicon carbide-based devices is to obtain a multi-layer epitaxial functional layer with a specific structure through epitaxy technology on the surface of the silicon carbide substrate. One of the typical technical characteristics of epitaxial technology is its reproduction, that is, the atomic state of the substrate surface is similar or close to the atomic state of the epitaxial layer. [0003] For a silicon carbide substrate with processing damage on the surface, it means that the surface atoms of the silicon carbide substrate are in a state of near-range disorder. It is easy to understand that the atomic arrangement of the epitaxial functional layer obtained based on this surface m...

AI Technical Summary

Problems solved by technology

[0005] 1) There are many overall process steps, the process is complicated, and there are many factors affecting process stability;

[0006] 2) There are many processes involved in the overall process, and each process needs to be equipped with one piece of equipment, which requires a lot of hardware equipment and increases investment in research and development or production;

[0007] 3) The abrasive (active ingredient) in the grinding liquid or polishing liquid is in a free state, which is easy to be lost, consumed quickly, and cannot fully exert its processing effect, resulting in waste of raw materials and increased costs;

[0008] 4) The removal rate of free abrasive processing is slow and the processing efficiency is low;

[0009] 5) The abrasive is in a free state, and the abrasive with the same particle diameter will produce thicker processing damage