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Method for manufacturing Cu2ZnSn(S, Se)4 solar battery absorbing layer through oxide thin film in vulcanizing and selenizing mode

A technology of oxide thin films and solar cells, which is applied in the field of solar photovoltaic materials, can solve problems such as human body and environmental hazards, and achieve low cost, wide applicability, and good crystallinity

Active Publication Date: 2014-02-19
山东中科泰阳光电科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, the commonly used Cu 2 ZnSnS 4 Thin film preparation technology is usually accompanied by the volatilization of sulfur or the generation of toxic gases such as hydrogen sulfide, which will cause great harm to the human body and the environment

Method used

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  • Method for manufacturing Cu2ZnSn(S, Se)4 solar battery absorbing layer through oxide thin film in vulcanizing and selenizing mode
  • Method for manufacturing Cu2ZnSn(S, Se)4 solar battery absorbing layer through oxide thin film in vulcanizing and selenizing mode
  • Method for manufacturing Cu2ZnSn(S, Se)4 solar battery absorbing layer through oxide thin film in vulcanizing and selenizing mode

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preparation example Construction

[0027] The present invention provides a low-cost, high-quality Cu 2 ZnSn(S,Se) 4 The preparation method of the thin film is simple in operation, convenient in controlling the stoichiometric ratio of elements, the precursor material used is low in cost and non-toxic, and the prepared thin film has uniform thickness and good crystallinity.

[0028] The method of the present invention is that metal precursor metal salt is dissolved in alcoholic solution, then obtains uniform oxide film with spin-coating method, then carries out sulfide-selenization to obtain high-quality Cu 2 ZnSn(S,Se) 4 Film absorber.

[0029] Specifically, as an example, the preparation method of the present invention may include the following steps.

[0030] First, the metal reactant precursors copper salt, zinc salt, and tin salt are represented by Cu 2 ZnSn(S,Se) 4 The stoichiometric ratio of Cu, Zn, and Sn in the solution is dissolved in the first solvent (such as ethanol), and then stirred until the ...

Embodiment 1

[0047] Add the reactant precursor 100ml ethanol, 1mmol copper acetate, 0.5mmol zinc acetate, 0.5mmol tin tetrachloride, 10ml ethylene glycol and 10ml propylene glycol into the reagent bottle in turn, stir at room temperature for 60 minutes until the solution is completely clear, and then add Spin coating on molybdenum substrate at a speed of 1000 rpm to form a film. After heating on a heating plate at 350°C, a uniform oxide film was obtained. Sulfurization and selenization annealing were carried out for 30 minutes under certain temperature conditions to obtain a thin film of the absorbing layer. The scanning electron microscope image of the absorbing film is shown in figure 1 It can be seen from the figure that the film distribution of the absorbing layer is uniform. figure 2 The optical bandgap diagram calculated from the absorption data of the absorbing layer thin film is shown. It can be seen from the figure that the forbidden bandwidth is about 1.2eV. image 3 Show the ...

Embodiment 2

[0049] Add reactant precursor 20ml methanol, 0.2mmol copper acetate, 0.1mmol zinc acetate, 0.1mmol tin dichloride, 2ml ethylene glycol and 2ml propylene glycol into the reagent bottle in turn, stir at room temperature for 10 minutes until the solution is completely clear, then Spin-coat a film on a molybdenum substrate at a speed of 500 rpm, and obtain a uniform oxide film after heating on a heating plate at 200 ° C. Repeat the above spin-coating steps for 5 times and then in a nitrogen atmosphere of 10,000 Pa, 450 Sulfurization and selenization annealing are carried out under the temperature condition of ℃ for 10 minutes to obtain the absorption layer thin film.

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Abstract

The invention relates to a method for manufacturing a Cu2ZnSn(S, Se)4 solar battery absorbing layer through an oxide thin film in a vulcanizing and selenizing mode. The method includes the steps that copper salt, zinc salt, tin salt, at least one first solvent selected from ethyl alcohol, methyl alcohol, isopropyl alcohol and propionic acid and a second solvent including an ethylene glycol solvent and a propylene glycol solvent are weighed according to the stoichiometric ratio to be mixed and prepared into a clear polymeric precursor solution, wherein in the polymeric precursor solution, the concentration of copper is 0.83-83mmol / L, the concentration of zinc and the concentration of tin are 0.42-42mmol / L, and the volume ratio of the first solvent and the second solvent is 5:(0.1-10); the polymeric precursor solution is made to be a film on a substrate in a spin-coating mode through a spin-coating method, then heating at the temperature of 200-450 DEG C is carried out, so that the oxide thin film is formed, and the spin-coating step is repeated for 5-20 times; vulcanizing and selenizing annealing at the temperature of 450-580 DEG C is carried out on the oxide thin film under the environment of inert gas containing sulfur and selenium, so that the Cu2ZnSn(S, Se)4 solar battery absorbing layer is obtained.

Description

technical field [0001] The invention belongs to the field of solar photovoltaic materials and relates to a Cu 2 ZnSn(S,Se) 4 A method for preparing an absorber layer of a thin film solar cell. Background technique [0002] With the continuous development of social economy, the energy problem has become a major problem facing the survival and development of all human beings. Photovoltaic technology, which converts solar energy into electrical energy, is an important means to solve energy problems in the future. Reducing device cost and improving device efficiency are the goals pursued by researchers engaged in solar cells. [0003] Among many thin film solar cells, the chalcopyrite structure Cu(In,Ga)Se 2 Semiconductor thin film materials are very potential materials for photovoltaic devices. However, due to the relatively low content of some metal elements in the earth's crust and their high prices, their development has been greatly restricted. [0004] Cu 2 ZnSnS 4...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/032
CPCH01L21/02568H01L31/0326H01L31/18Y02E10/50Y02P70/50
Inventor 黄富强刘玉峰谢宜桉李爱民张雷秦明升朱小龙王耀明
Owner 山东中科泰阳光电科技有限公司
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