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Single photon emitter based on high refractive index contrast grating structure and its manufacturing method

A technology with high refractive index contrast and grating structure, which is applied in the direction of phonon exciters, lasers, laser components, etc., to achieve the effects of improving performance, saving growth source materials, and reducing difficulty

Active Publication Date: 2016-09-14
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Application Information

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Problems solved by technology

But usually this method by changing the distribution of light in the medium can only split the linear polarization into submillielectron volts

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  • Single photon emitter based on high refractive index contrast grating structure and its manufacturing method
  • Single photon emitter based on high refractive index contrast grating structure and its manufacturing method
  • Single photon emitter based on high refractive index contrast grating structure and its manufacturing method

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Embodiment Construction

[0020] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0021] The single photon emitter based on the high refractive index contrast grating structure provided by the present invention first grows high-quality device epitaxial wafers on the GaAs substrate by molecular beam epitaxy technology, then uses surface emission technology to make electrodes, and finally uses electron beam Exposure produces a grating structure.

[0022] figure 1 It is a structural schematic diagram of a single photon emitter based on a high refractive index contrast grating structure provided by the present invention. Such as figure 1 As shown, the single photon emitter includes: GaAs buffer layer 1, N-type electrode 2, silicon dioxide passivation layer 3, lower DBR4, InAs quantum dot active region 5,...

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Abstract

The invention discloses a single photon emitter based on a high refractive index contrast grating structure and a manufacturing method thereof. The single photon emitter comprises: a GaAs substrate; an epitaxial wafer prepared on the GaAs substrate, the epitaxial wafer comprises GaAs buffer layers (1), DBRs (4) and (6), InAs quantum dots from bottom to top in sequence. Source region (5) and high index contrast grating (low index (7) and high index material (8)). Standard photolithography and ICP techniques are used to etch the epitaxial wafer to expose the GaAs buffer layer as an N-type ohmic contact layer, and then evaporate alloys on the high-refractive index material and the GaAs buffer layer as P-type electrodes and N-type electrodes. Using electron beam exposure and ICP etching technology to fabricate sub-micron scale gratings on high refractive index materials, and use corrosive liquid to selectively etch the material of the lower layer of the grating to obtain an air layer with low refractive index.

Description

technical field [0001] The invention relates to the technical fields of semiconductor technology, quantum computing and quantum information processing, in particular to a single photon emitter based on a high refractive index contrast grating structure and a manufacturing method thereof. Background technique [0002] With the huge expansion of society's demand for information, people's acquisition and processing of information has developed from one-dimensional space-time to two-dimensional. In addition to the mass transmission of information, the military pays more attention to the absolute security of information, and quantum information processing has also become an international frontier topic. It requires a large capacity for information transmission and requires absolute security of information, which is a huge challenge for information light sources. Single photon source is the key device to realize single photon qubit, optical quantum cryptography (quantumcryptograp...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/125H01S5/343
Inventor 王莉娟喻颖査国伟徐建星倪海桥牛智川
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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