Preparation method of tapered zinc oxide/nickel oxide heterojunction diode

Abstract

The invention relates to the preparation technology of heterojunction ultraviolet laser diodes, in particular to a method for preparing pointed-cone-shaped p-NiO (nickel oxide) / n-ZnO (zinc oxide) heterojunctions by combining the film coating technology and the femtosecond laser technology. According to the method, firstly, heat oxidation is utilized to form a NiO layer on a nickel sheet, then, an atomic layer deposition method is utilized for preparing a ZnO layer, next, an ITO (indium tin oxide) transparent upper electrode is formed outside the n-type ZnO layer by a sputtering method, finally, a pointed-cone-shaped array is formed on the nickel sheet covered with an NiO / ZnO / ITO layer by the femtosecond laser processing technology, pointed-cone-shaped p-NiO / n-ZnO heterojunctions are formed, voltage is applied to the ITO and the bottom of the nickel sheet, and the electroluminescence can be realized.

Description

technical field [0001] The invention relates to a preparation technology of a heterojunction ultraviolet laser diode, in particular to the preparation of a tapered p-NiO / n-ZnO heterojunction by combining coating technology and femtosecond laser technology. Background technique [0002] Zinc oxide (ZnO) is a direct wide bandgap compound semiconductor material, its room temperature bandgap is 3.37ev, and the exciton binding energy is 60mev, so ZnO is an ideal material for semiconductor lasers at room temperature and higher temperatures; intrinsic ZnO is a transparent n-type semiconductor, but so far, there is no stable p-type ZnO preparation method, so it is very difficult to prepare ZnO homojunction diodes; and intrinsic nickel oxide (NiO) is a p-type Semiconductor material with a direct bandgap of 3.7eV, p-type NiO and n-type ZnO can form heterojunction diodes; due to the wide bandgap characteristics of ZnO and NiO, they have good thermal and chemical stability, and there is...

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Problems solved by technology

[0002] Zinc oxide (ZnO) is a direct wide bandgap compound semiconductor material, its room temperature bandgap is 3.37ev, and the exciton binding energy is 60mev, so ZnO is an ideal material for semiconductor lasers at room temperature and higher temperatures; intrinsic ZnO is a transparent n-type semiconductor, but so far, there is no stable p-type ZnO preparation method, so it is very difficult to prepare ZnO homojunction diodes; and intrinsic nickel oxide (NiO) is a p-type Semiconductor material with a direct bandgap of 3.7eV, p-type NiO and n-type ZnO can form heterojunction diodes; due to the wide bandgap characteristics of ZnO and NiO, they have good thermal and chemical stability, and there is no environment during the preparation process Pollution, so that the heterojunction diode composed of NiO and ZnO has considerable advantages

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