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Thermal annealing method for manufacturing hydrogen end group conducting channel on diamond face

A technology of surface fabrication and conductive channel, applied in circuits, electrical components, semiconductor/solid-state device manufacturing, etc., can solve the problems of rough diamond surface, high etchability, and great influence of conductive properties.

Active Publication Date: 2015-07-08
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although this method can effectively realize the diamond conductive channel, due to the high energy and high etching properties of the hydrogen plasma itself, the treated diamond surface becomes extremely rough, and the surface roughness becomes nearly 10% of that before treatment. times
The formed conductive channel exists near the surface, so its conductive properties are greatly affected by the surface morphology. The rough surface limits the improvement of the carrier mobility of the diamond conductive channel. Therefore, most of the hydrogen Plasma-treated surface channels, whose mobility can only reach 20cm 2 / V·s

Method used

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  • Thermal annealing method for manufacturing hydrogen end group conducting channel on diamond face
  • Thermal annealing method for manufacturing hydrogen end group conducting channel on diamond face
  • Thermal annealing method for manufacturing hydrogen end group conducting channel on diamond face

Examples

Experimental program
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Effect test

Embodiment 1

[0030] Embodiment 1, (1) Use acetone, trichloroethane, isopropanol and other organic solvents to clean the polycrystalline diamond substrate; put the cleaned polycrystalline diamond substrate into the chemical vapor deposition equipment reaction chamber, and place The reaction chamber was evacuated to 10 -6 mbar, the structure of polycrystalline diamond is as figure 1 shown;

[0031] (2) Raise the temperature of the reaction chamber to 600°C to remove impurities and organic residues on the surface of the polycrystalline diamond substrate;

[0032] (3) Introduce hydrogen gas into the reaction chamber, the gas flow rate is 40L / min, the pressure of the reaction chamber is maintained at 80mbar, the temperature of the reaction chamber is raised, the polycrystalline diamond substrate is heated to 800°C, and kept in the hydrogen atmosphere for 30 minutes, the polycrystalline diamond The structure is as figure 2 shown

[0033] (4) Turn off the heating power supply of the reaction...

Embodiment 2

[0034] Embodiment two, (1) polycrystalline diamond substrates are cleaned with organic solvents such as acetone, trichloroethane, and isopropanol; the polycrystalline diamond substrates after cleaning are placed in the chemical vapor deposition equipment reaction chamber, and The reaction chamber was evacuated to 10 -6 mbar, the structure of polycrystalline diamond is as figure 1 shown;

[0035] (2) Raise the temperature of the reaction chamber to 600°C to remove impurities and organic residues on the surface of the polycrystalline diamond substrate;

[0036] (3) Introduce hydrogen into the reaction chamber, the gas flow rate is 40L / min, the pressure of the reaction chamber is maintained at 500mbar, the temperature of the reaction chamber is raised, the polycrystalline diamond substrate is heated to 800°C, and kept in the hydrogen atmosphere for 20 minutes, the polycrystalline diamond The structure is as figure 2 shown

[0037] (4) Turn off the heating power supply of the...

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Abstract

The invention discloses a thermal annealing method for manufacturing a hydrogen end group conducting channel on a diamond face, which is characterized by comprising the steps as follows: (1) placing a polycrystalline diamond substrate in a chemical vapor deposition equipment reaction chamber, and vacuumizing the reaction chamber; (2), heating the reaction chamber and keeping the heating temperature for a period of time to remove impurities and organic residuals on the face of the polycrystalline diamond substrate; (3), introducing hydrogen into the reaction chamber, heating the polycrystalline diamond substrate in hydrogen atmosphere and keeping constant temperature for a period of time; (4), reducing the flow of the hydrogen, taking out the polycrystalline diamond substrate after reducing the temperature of the polycrystalline diamond substrate to room temperature in the hydrogen atmosphere, and closing all gas sources. The thermal annealing method can effectively form a C-H bond on the diamond face, realizes the conducting channel, and can enable the diamond face to be smooth and flat, thus improving the migration rate of carriers; and the roughness before and after the processing is basically same.

Description

technical field [0001] The invention relates to the technical field of manufacturing methods of semiconductor devices. Background technique [0002] Devices based on single crystal, polycrystalline and nanocrystalline diamond are collectively referred to as diamond-based devices, such as diamond MESFET, MISFET, JFET, etc. Diamond-based devices have the advantages of high operating temperature, strong breakdown field, high cut-off frequency, and high power density, and are the first choice for the future microwave high-power field. One of the necessary conditions for making semiconductor devices is to realize an effective conductive channel on the high-resistance polycrystalline diamond material. [0003] The current method for fabricating conductive channels mainly utilizes hydrogen plasma treatment. Although this method can effectively realize the diamond conductive channel, due to the high energy and high etching properties of the hydrogen plasma itself, the treated diam...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02H01L21/335
Inventor 王晶晶冯志红刘庆彬何泽召蔚翠
Owner THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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