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Variable-cycle multi-beam interference photoetching method

A multi-beam interference and lithography technology, which is applied in the field of nano-processing, can solve problems such as complex optical paths and difficult adjustment of beam incident angles, and achieve the effect of simple optical paths, easy pattern cycles, and large-area multi-beam interference lithography

Active Publication Date: 2013-08-07
INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI
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Problems solved by technology

[0006] The technical problem to be solved by the present invention is to propose a variable-period multi-beam interference lithography method in view of the shortcomings of the existing multi-beam interference lithography system, such as complex optical path and difficulty in adjusting the incident angle of the beam.

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Embodiment 2

[0040] Embodiment 2 of the present invention is a four-beam interference lithography system capable of adjusting the period in the range of 656 nm to 1.94 μm.

[0041]In this system, the ultraviolet laser 1 is an argon ion laser with an output wavelength of 363.8nm, and the light splitting element 4 is a four-beam light splitting element, which is a phase diffractive optical element, and the first-order light diffraction angle is 10°. With regard to the rotational symmetry of the optical axis, the focal length of the collimator lens 5 is 25 mm, and the aperture is 12.5 mm. The incident aperture of the continuous zoom beam expander 6 is 10 mm, and the output aperture is 30 mm. times, the focal length of the focusing lens 7 is 50 mm, the aperture is 30 mm, and the numerical aperture is 0.3.

[0042] Place the light splitting element 4 at the focal point of the collimating lens 5, the laser beam is symmetrically divided into four beams by the light splitting element 4 after shapi...

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Abstract

The invention relates to a variable-cycle multi-beam interference photoetching method which comprises the following steps that a laser output by a laser device is reshaped, and is split into symmetrically distributed divergent beams by a beam splitting element; after passing through a collimating lens, a plurality of divergent beams are collimated into a plurality of parallel beams parallel to an optical axis; the interval between parallel beam and the optical axis is regulated through a continuous booming and expanding lens; a focusing lens focuses each beam, and a multi-beam interference pattern is formed on a focal plane; sample sheets which are coated with photo resists are arranged on the focal plane of the focusing lens so as to achieve multi-beam interference photoetching; the continuous booming and expanding lens is regulated to change the distance from each beam to the optical axis, so that the incident angle of each beam in interference is changed, and the variable-cycle multi-beam interference photoetching is obtained; and an interference exposure field is subjected to step scanning and splicing at the x-y direction through a sheet bearing platform so as to obtain the large-scale exposure. The variable-cycle multi-beam interference photoetching method provided by the invention has the advantages of easiness in regulating of a pattern cycle, capability of achieving large-area multi-beam interference photoetching and the like, and is used for the research fields of panel display, biosensing, solar batteries and self-cleaning structures.

Description

technical field [0001] The invention belongs to the technical field of nano-processing, and relates to a variable-period multi-beam interference photolithography method. technical background [0002] Laser interference lithography has the advantages of high resolution, no mask, long focal depth, low cost, and high efficiency. Research fields such as anti-anti-absorption of solar cells play an important role. [0003] The period of the laser interference lithography pattern is determined by the incident angles of the two mutually interfering beams. Therefore, in order to obtain micro-nano structures with different periods, the incident angles of the two interfering beams in the laser interference lithography system must be adjusted. For the traditional dual-arm laser interference lithography system with beam splitting by beamsplitter and beam combining by mirrors, in order to change the incident angle of the two beams, the optical paths of the two branches and the positions ...

Claims

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Application Information

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IPC IPC(8): G03F7/20G02B27/09G02B26/08
Inventor 方亮岳衢邱传凯罗先刚张铁军
Owner INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI
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