Growth device and method for phosphorus-germanium-zinc single crystal
The technology of a growth device and a growth method, which is applied in the field of growth devices of phosphorus-germanium-zinc single crystals, can solve the problems of low success rate of single crystals, unstable temperature field, low probability of nucleation of phosphorus-germanium-zinc single crystals, and achieve nucleation rate Improve, ensure stability, and facilitate the effect of automated growth
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Embodiment 1
[0037] In this embodiment, the growth device of phosphorus-germanium-zinc single crystal is as follows figure 1 As shown, its structure includes a crucible holder 1 and a quartz crucible 3, and also includes an insulating powder 2 filled between the crucible holder 1 and the quartz crucible 3, and the quartz crucible 3 is provided with a growth ampoule 4, and the crucible holder 1 is placed on the base 8 on.
[0038] The inner diameter of the crucible holder 1 used is 40 mm, its thickness is 5 mm, and its length is 25 mm. The material of the crucible holder 1 is alumina.
[0039] The material of the insulation powder 2 used is alumina powder.
[0040] The inner diameter of the quartz crucible 3 is 15 mm, its thickness is 2.5 mm, and its length is 20 mm.
[0041] The outer diameter of the growth ampoule 4 is 14mm, its thickness is 1.5mm, its length is 15mm-25mm, and its material is quartz.
[0042] The growth method of the phosphorous germanium zinc single crystal in the pre...
Embodiment 2
[0049] The difference between this embodiment and Embodiment 1 is: the material of the crucible holder 1 is zirconia; other structures and processes of the device are the same.
Embodiment 3
[0051] The difference between this embodiment and Embodiment 1 is: the material of the growth ampoule 4 is boron nitride; other structures and processes of the device are the same.
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