Mask plate, manufacturing method thereof, and exposure method of photoresist layer

Abstract

The invention relates to a mask, a manufacturing method of the mask and a method for exposing a photoresist layer. The mask comprises a transparent substrate; a reserved region of the transparent substrate is provided with doping ions; a graph on the mask is formed by the reserved region with the doping ions; the doping ions implement transition from low energy level to high energy level under the irradiation of pump light; after implementing the transition from low energy level to high energy level, the doping ions generate transmitted light under the irradiation of induction light; the wavelength, phase, amplitude and propagation direction of the transmitted light are all the same with those of the induction light; and the light intensity of the transmitted light is higher than those of the induction light and the pump light. The technical scheme changes a conventional method for exposing the photoresist layer, so that the phenomenon of diffraction generated when light passes through the mask is avoided and no matter what extent the feature size of the graph is reduced to, the mask can be utilized to carry out a process for exposing the photoresist layer.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a mask plate, a manufacturing method thereof, and an exposure method of a photoresist layer. Background technique [0002] In the semiconductor manufacturing process, the photolithography process plays a central role and is the most important process step in the production of integrated circuits. With the development of semiconductor manufacturing technology, the feature size is getting smaller and smaller, and the requirements for resolution in the photolithography process are getting higher and higher. Lithography resolution refers to the minimum feature size that can be exposed on the surface of a silicon wafer by a lithography machine, and is one of the important performance indicators in lithography technology. [0003] figure 1 It is a schematic diagram in the prior art where light is irradiated onto a silicon wafer with a photoresist layer after passing through a ...

AI Technical Summary

Problems solved by technology

However, due to the existence of diffraction phenomenon when the light passes through the mask, the above technologies for improving the resolution of lithography will encounter the limit when the feature size of the pattern becomes smaller and smaller.

[0007] In the prior art, there are many patent documents about mask plates, such as the “method of repairing a polymer mask” disclosed by US Patent Application Publication No. US2009 / 0095922A1 published on April 16, 2009. method)", however, none of the above technical problems have been solved

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