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Preparation method of black yttrium oxide (Y2O3) ceramic coating

A Y2O3, ceramic coating technology, applied in coating, metal material coating process, fusion spraying and other directions, can solve problems such as high cost, limited life of parts, peeling of process cavity wall coating, etc., to achieve low manufacturing cost Effect

Active Publication Date: 2015-04-15
SOI MICRO CO LTD
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  • Summary
  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

Entering the 300mm equipment, as the plasma power increases, the plasma damages the etching process cavity wall more and more, making the following problems prone to occur during the etching process: (1) particles; (2) process The cavity wall coating peels off, causing the plasma to directly interact with the aluminum substrate; (3) Al 2 o 3 Component life limited by higher power
[0008] Black Y can be well prepared by laser radiation or electron beam radiation. 2 o 3 Coating, Y after laser beam irradiation or electron beam irradiation 2 o 3 The coating powder is melted and recombined, the binding force between the bonds is enhanced, the chemical activity is significantly improved, and the Vickers hardness is increased, so that the wear resistance is better, but the cost is higher

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  • Preparation method of black yttrium oxide (Y2O3) ceramic coating

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Embodiment Construction

[0028] The technical solution of the present invention will be described in detail below in conjunction with the accompanying drawings and embodiments.

[0029] like figure 1 As shown, the embodiment of the present invention provides a black Y 2 o 3A method for preparing a ceramic coating, specifically comprising the steps of:

[0030] (1) Select Y with a purity greater than 99.95% 2 o 3 Powder, the original particle size of the powder is 40-60nm, the original Y 2 o 3 The powder is prepared into a slurry through an organic adhesive, and the fine powder is aggregated together by a granulation device to form spherical particles. The particle size range of the secondary granulation is 5-60 μm; the powder after the secondary granulation is The spherical shape of the porous structure is a hollow micron ball assembled by small nano-particles, which has excellent fluidity;

[0031] (2) Y after secondary granulation 2 o 3 The powder is placed in a reaction furnace or an annea...

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Abstract

The invention relates to the technical field of yttrium oxide (Y2O3) ceramic coatings, in particular to a preparation method of a black Y2O3 ceramic coating. The preparation method comprises the following steps: (1) selecting Y2O3 powder larger than 99.95% in purity; (2) conducting secondary granulation on the Y2O3 powder, and conducting high-temperature reduction sintering treatment; (3) pre-processing the surface of a substrate to be coated; (4) conducting plasma spraying on the surface of the substrate through plasma spraying equipment, and preparing the black Y2O3 coating. The preparation method restores original Y2O3 powder into black through deuterium (H2) in the secondary granulation process, sprays the Y2O3 powder to the substrate through the plasma spraying, and then prepares the black Y2O3 ceramic coating. The black Y2O3 ceramic coating prepared through the preparation method has corrosion resistance and dirty resistance, and is low in manufacture cost.

Description

technical field [0001] The present invention relates to Y 2 o 3 Ceramic coating manufacturing technical field, specifically relate to a kind of black Y 2 o 3 Preparation method of ceramic coating. Background technique [0002] At present, the low-temperature plasma microfabrication method is the key technology for micro-nano processing of materials. It is the basis of preparation technologies such as microelectronics, optoelectronics, micromechanics, and micro-optics. One of the processes is completed by means of plasma processing, such as plasma film deposition, plasma etching, and plasma deglue. Among them, plasma etching is one of the most critical processes, and it is an irreplaceable process to realize the high-fidelity transfer of micro-patterns in VLSI production from photolithographic templates to silicon wafers. [0003] During the etching process, due to the presence of a large number of highly corrosive active free radicals (such as Cl * , Cl 2 * , F * , ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C4/10C23C4/12C23C4/11C23C4/134
Inventor 邵花王文东刘邦武夏洋李勇滔
Owner SOI MICRO CO LTD
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